Silicon Wafer-Bonding Process Technology for SOI Structures

Abe, Tomoyuki; Nakano, Masatake; Itho, T.; Takei, Tokio; Uchiyama, Atsuo; Yoshizawa, Keiko; Nakazato, Yasuyuki

doi:10.7567/ssdm.1990.s-ci-12

Cited by 14 publications

(8 citation statements)

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“…The starting wafers must be smooth and flat. There have been studies of the necessary surface quality for wafer bonding [23], [24], and in general, it has been experimentally observed that the wafers should have a roughness of no greater than about 10Å and a bow of less than 5 m (on a wafer). Also, protrusions from the surface (resulting from previous processing) of greater than 10Å can produce problems in the bonding.…”

Section: B Silicon Bonding Processmentioning

confidence: 99%

Wafer-to-wafer bonding for microstructure formation

1998

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Section: B Silicon Bonding Processmentioning

confidence: 99%

Wafer-to-wafer bonding for microstructure formation

1998

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“…A few widely employed techniques exist for accomplishing layer transfer of a thin film of material onto any desired substrate: ͑i͒ back-side grinding, ͑ii͒ grind and etchback, and ͑iii͒ delamination via implantation. In the grind and etchback approach, wafers are bonded, the back side of the wafer containing the transfer layer is thinned by grinding, [5][6][7] possibly followed by an etch to remove the remaining excess material, [8][9][10] leaving the transfer layer. The other method, delamination via implantation ͑dubbed Smart-Cut͒, employs ion implantation prior to wafer bonding, followed by annealing to cause delamination and layer transfer at the implant depth.…”

mentioning

confidence: 99%

Ultrathin Strained Si-on-Insulator and SiGe-on-Insulator Created using Low Temperature Wafer Bonding and Metastable Stop Layers

Taraschi

Pitera

McGill

et al. 2004

J. Electrochem. Soc.

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A method for fabricating smooth, uniform thickness, low defect density, monocrystalline SiGe alloys and strained Si on any desired substrate was developed, allowing for the creation of SiGe-on-insulator and strained Si-on-insulator. After wafer bonding and layer transfer via either delamination by hydrogen implantation, or back side grinding and Si etching, a selective SiGe etch was used to remove excess material and expose a strained Si stop layer. Recent improvements made to the process include more robust stop layers, low temperature wafer bonding, and improved selective SiGe etching. A major improvement involves the use of metastable films that allow for thicker stop layers. Experimental data for threading and misfit dislocation density for metastable Si layers on Si 0.75 Ge 0.25 virtual substrates is presented. Another improvement is the use of plasma activation prior to wafer bonding, allowing for strong low temperature bonding, while enabling metastable layers to retain their nonequilibrium strain state. Within the context of layer transfer followed by etching, a detailed analysis of SiGe selective etching stopping on strained Si was conducted. An etch consisting of nitric acid and dilute hydrofluoric acid was optimized to yield an acceptable selectively and etch rate, while not creating any pinholes in the exposed stop layer.

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“…Tensile test, also called pulling test, is a method that pull apart the bonded samples and measure bonding strength. This method was first used for bonded silicon wafer by Abe et al [10]. Both side of the bonded wafer are glued to the pulling rods, and then force is applied and increased until the pulling rods are moved apart.…”

Section: Bond Characterizationmentioning

confidence: 99%

Direct Al-Al contact in silicon-Pyrex7740 anodic bonding for hermetic package and electrical interconnecting

Zheng

Yan

Song

et al. 2011

2011 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

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A hermetic package by silicon-Pyrex7740 anodic bonded structure which has Al electronic contact pads in the bonding area has been successfully demonstrated. Silicon wafer was doped with boron at the dose about 2 10 20 cm -3 , then Al contact pads were deposited by using RF sputtering on silicon and Pyrex7740 respectively. Sufficient mechanical strength has been test after silicon-Pyrex7740 anodic bonding, though with Al contact pads on the bonding surface. IPA (Isopropanol Alcohol) test and accelerate test in an autoclave are used to detect the hermitic package quality. The results show that the anodic bonding with Al pads sandwiched in the banded structure has no influence on hermetic packaging. The average sheet resistance of the Al contact pads is 3.45ohmic/ which calculated form I-V tested, indicating that direct Al-Al interconnecting is suitable for electrical interconnecting for integration of MEMS devices.

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Silicon Wafer-Bonding Process Technology for SOI Structures

Cited by 14 publications

References 0 publications

Wafer-to-wafer bonding for microstructure formation

Wafer-to-wafer bonding for microstructure formation

Ultrathin Strained Si-on-Insulator and SiGe-on-Insulator Created using Low Temperature Wafer Bonding and Metastable Stop Layers

Direct Al-Al contact in silicon-Pyrex7740 anodic bonding for hermetic package and electrical interconnecting

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