Silicon thin films obtained by rapid thermal atmospheric pressure chemical vapour deposition

Monna, R.; Slaoui, A.; Lachiq, A.; Müller, J. C.

doi:10.1016/0921-5107(95)01533-7

Cited by 7 publications

(1 citation statement)

References 6 publications

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“…The deposition of thin film silicon on float glass by APCVD from TCS at intermediate temperatures has not previously been explored. Other authors have used APCVD from TCS, but at temperatures higher than 900 °C, thus limiting, to ceramics or low‐cost silicon, the substrates that can be used. The use of float glass substrates can potentially reduce the cost of the solar cells, offering also the possibility of depositing them in a superstrate configuration.…”

Section: Introductionmentioning

confidence: 99%

Doped Polycrystalline Silicon Thin Films Deposited on Glass from Trichlorosilane**

Benvenuto

Buitrago‐Sierra

Schmidt

2015

Chemical Vapor Deposition

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Atmospheric pressure (AP) thermal CVD is used to deposit thin poly-Si films on glass substrates. Also produced are heterojunction solar cells carrying out the deposition on c-Si wafers. A batch-type hot-wall reactor, employing SiHCl 3 as a precursor, H 2 as a carrier and reaction gas, BBr 3 as a p-type doping agent, and PCl 3 as a n-type doping agent, is used. The films obtained are homogeneous and well-adhered to the substrate. Samples are structurally characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), reflectance spectroscopy in the UV-vis region, X-ray diffraction (XRD), and Raman spectroscopy (RS). The electrical characterization includes conductivity measurements as a function of temperature, and Hall effect measurements. For the p-doped samples, XRD reveals a strong (220) preferential orientation of the films, while the n-doped samples lack columnar structure or preferential orientation. RS and UV-reflectance confirm a high crystalline fraction. Dark conductivity measurements as a function of temperature show that the films can be grown intrinsic, p-type or n-type. Activation energies between 0.61 and $0 eV are obtained, with reasonable values for the carrier mobilities. For the solar cells, relatively high values of V OC ($507 mV) and J SC ($29.6 mA cm À2 ) are measured. In conclusion, these results demonstrate the feasibility of directly depositing doped poly-Si thin films on glass and c-Si substrates at intermediate temperatures, with interesting characteristics for photovoltaic applications.

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Section: Introductionmentioning

confidence: 99%