Silicon thickness variation of FD-SOI wafers investigated by differential reflective microscopy

Auerhammer, J.; Hartig, Carsten; Wendt, Kay; Oostrum, R. van; Pfeiffer, G.; Bayer, Sena Esen; Srocka, B.

doi:10.1109/s3s.2016.7804378

Cited by 4 publications

(1 citation statement)

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“…In SOI wafers, characterization of SOI structure is essential, as they significantly influence device fabrication. Typically, optical methods such as reflectometry and ellipsometry are employed for these measurements [63][64][65]. These techniques rely on fitting the measured data to a pre-calculated multilayer model to extract the thicknesses.…”

Section: Structural Characterizationmentioning

confidence: 99%

Fabrication and characterization of silicon-on-insulator wafers

Kim,

Lee

2023

Micro and Nano Syst Lett

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Silicon-on-insulator (SOI) wafers offer significant advantages for both Integrated circuits (ICs) and microelectromechanical systems (MEMS) devices with their buried oxide layer improving electrical isolation and etch stop function. For past a few decades, various approaches have been investigated to make SOI wafers and they tend to exhibit strength and weakness. In this review, we aim to overview different manufacturing routes for SOI wafers with specific focus on advantages and inherent challenges. Then, we look into how SOI wafers are characterized for quality assessment and control. We also provide insights towards potential future directions of SOI technology to further accelerate ever-growing IC and MEMS industries.

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Section: Structural Characterizationmentioning

confidence: 99%