Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial silicon deposition. I. Process considerations

Comfort, J.H.; Garverick, L. M.; Reif, R.

doi:10.1063/1.339301

Cited by 94 publications

(18 citation statements)

References 19 publications

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“…The deposition system has been described in detail elsewhere (12), and a schematic of the reactor is shown in Fig. The deposition system has been described in detail elsewhere (12), and a schematic of the reactor is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures

Hajjar

Reif

1990

J. Electrochem. Soc.

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Polycrystalline silicon thin films prepared by the pyrolysis of silane with the assistance of a plasma have been investigated. The films were deposited in an experimental CVD reactor at a deposition pressure of 6 mtorr, and over the temperature range of 500 ~ to 800~ The foremost characteristic of the plasma was the enhancement of the growth rate of the film. A thirtyfold increase in growth rate was observed in films deposited at 600~ by plasma enhancement over similar films deposited thermally. The films deposited below 600~ were amorphous. The glow-discharge was also seen to favor the nucleation of <220> islands in the polysilicon film, but had no effect on the electrical properties of the film. In situ doped n-type polysilicon films were deposited by plasma enhancement from AsHjSiH4 mixtures. The growth rate of the latter films was found to be weakly sensitive to the arsine dilution in silane. For p-type depositions from B2H6/SiH4 mixtures, the plasma promoted the decomposition of the reactant gas, resulting in a growth rate enhancement. The texture of the doped polysilicon films deposited with plasma enhancement was insensitive to dopant dilution in the reactant gas. Moreover, the conductivities of the n-and p-type doped films were successfully modulated by over six orders of magnitude when the dopant dilution in the reactant gas was increased from 0 to 500 ppm. Finally, a segregation of the dopant atoms from the gas phase to the solid phase was observed for both p-and n-type dopants.

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Section: Methodsmentioning

confidence: 99%

Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures

Hajjar

Reif

1990

J. Electrochem. Soc.

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“…Similar cleaning effects may be achieved with much simpler plasma sputtering systems. 7 The problem with all techniques involving ion bombardment is the induced crystal structure disorder and the ion incorporation. While high temperature annealing may remove some aspects of the disorder and the impurities, defects usually remain.…”

Section: Introductionmentioning

confidence: 99%

Characterization of a slot antenna microwave plasma source for hydrogen plasma cleaning

Korzec

Werner

Brockhaus

et al. 1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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A new large volume microwave plasma source has been used for the production of a hydrogen plasma. The source consists of an annular waveguide cavity with axial slots on the inner side which acts as a field applicator to sustain a plasma at 2.45 GHz. The plasma is contained in a fused silica bell jar of 16 cm in diameter and 20 cm in height. The distance between the slots corresponds to a waveguide wavelength. The source is able to generate a highly dissociated (up to 90%) hydrogen plasma for cleaning purposes. Stable operation of the plasma source is shown for a pressure range of 0.1–1.3 mbar and a power range of 600–2000 W. The plasma can be ignited over the entire examined pressure range, and the power needed for discharge ignition is below 1.7 kW. The minimum ignition power is 1050 W for a pressure of 0.7 mbar. A double Langmuir probe and optical emission spectroscopy were used to characterize the hydrogen plasma as a function of microwave power, pressure, and position. The results indicated a typical ion density of 1.5×1011 cm−3 which is an order of magnitude less than that obtained for argon under similar conditions. The typical electron temperature is 2.5 eV for microwave power of 2 kW and pressure of 0.7 mbar.

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“…[1][2][3][4][5] Plasma-assisted processes constitute an excellent alternative to wet chemical cleaning/etching processes for fine-line lithography as well as cleaning the walls of deep narrow trenches into which wet chemicals cannot penetrate due to surface tension. [1][2][3][4][5] Plasma-assisted processes constitute an excellent alternative to wet chemical cleaning/etching processes for fine-line lithography as well as cleaning the walls of deep narrow trenches into which wet chemicals cannot penetrate due to surface tension.…”

Section: Introductionmentioning

confidence: 99%

Thermal anneal activation of near-surface deep level defects in electron cyclotron resonance hydrogen plasma-exposed silicon

Nam

Ashok

Sekiguchi

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Electrically active defects induced by sputtering deposition on silicon: The role of hydrogen J. Appl. Phys. 95, 4752 (2004); 10.1063/1.1690453 Formation and passivation kinetics of gold-hydrogen complexes in n-type silicon J. Appl. Phys. 93, 753 (2003); 10.1063/1.1524012 Chemical composition, morphology, and deep level electronic states of GaN (0001) (1×1) surfaces prepared by indium decapping Deep level transient spectroscopy study of the damage induced in n -type silicon by a gate oxide etching in a CHF 3 /Ar plasma J.Electron cyclotron resonance hydrogen plasma has been found effective in cleaning Si surfaces in a matter of minutes, with no substrate heating. Deep level transient spectroscopy measurements showed only a broad defect peak with relatively low concentration immediately after the plasma exposure. Subsequent thermal anneals reveal emergence of strong new defects that have apparently been latent until the thermal anneal treatment. After annealing at temperatures above 450°C, several well-defined defect peaks with concentrations above 1ϫ10 13 cm Ϫ3 appear near the Si surface. These defect concentrations reach their maximum at an anneal temperature of 500°C and reduce to negligible levels at 750°C. Experiments on wafers of different oxygen concentrations show that these defects are unrelated to the presence of oxygen in Si.

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Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial silicon deposition. I. Process considerations

Cited by 94 publications

References 19 publications

Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures

Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures

Characterization of a slot antenna microwave plasma source for hydrogen plasma cleaning

Thermal anneal activation of near-surface deep level defects in electron cyclotron resonance hydrogen plasma-exposed silicon

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