Silicon sensors: full of promises and pitfalls

Middelhoek, S.; Audet, S.A.

doi:10.1088/0022-3735/20/9/002

Cited by 22 publications

(3 citation statements)

References 23 publications

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“…An estimate of the maximum pressure which can be applied without destroying the membrane is 50 kPa To generate the same displacement by a uniform Ioad on the membrane, the pressure wilI be almost a factor two higher 1141. This pressure induced a shift of bias directions and therefore cannot be the result of a piezoresistivity effect [15]. No other pressure effects on the ohmic contacts occur, because there is no shift in voltage around zero bias.…”

Section: Methodsmentioning

confidence: 96%

A GaAs pressure sensor based on resonant tunnelling diodes

Fobelets¹,

Vounckx²,

Borghs³

1994

J. Micromech. Microeng.

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A GaAs-AlAs resonant tunnelling diode (RTD) is incorporated in a 1 mu m thick membrane and used as a pressure sensor. The fabrication technology of the membrane is based upon the selective etch of GaAs with AlAs as an etch stop layer. An external pressure introduces stress in the layers of the RTD and modifies the position of the conduction band, the value of the effective mass and the Fermi level. These variations will change the peak current and voltage of the RTD. Measurements at room temperature show that the effect of an applied pressure on a symmetric RTD is asymmetric. This asymmetric is explained theoretically by the difference in the sign of the stress between the top and bottom layers of the RTD.

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Section: Methodsmentioning

confidence: 96%

A GaAs pressure sensor based on resonant tunnelling diodes

Fobelets¹,

Vounckx²,

Borghs³

1994

J. Micromech. Microeng.

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“…In addition, the inherent high resistance of silicon decreases the final thermal sensitivity and has prevented their utilization in practical thermocouple applications 25 – 27 . Furthermore, previously demonstrated silicon-based thermocouples involved challenging fabrication processes such as elaborate wafer-etching and bonding to accomplish electrical isolations between the silicon and metal as well as to demonstrate compatibility with bipolar or CMOS processes 28 .…”

Section: Introductionmentioning

confidence: 99%

High-performance flexible metal-on-silicon thermocouple

Assumpção

Kumar

Narasimhan

et al. 2018

Sci Rep

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We have demonstrated metal-on-silicon thermocouples with a noticeably high Seebeck coefficient and an excellent temperature-sensing resolution. Fabrication of the thermocouples involved only simple photolithography and metal-liftoff procedures on a silicon substrate. The experimentally measured Seebeck coefficient of our thermocouple was 9.17 × 10−4 V/°K, which is 30 times larger than those reported for standard metal thin-film thermocouples and comparable to the values of alloy-based thin-film thermocouples that require sophisticated and costly fabrication processes. The temperature-voltage measurements between 20 to 80 °C were highly linear with a linearity coefficient of 1, and the experimentally demonstrated temperature-sensing resolution was 0.01 °K which could be further improved up to a theoretical limit of 0.00055 °K. Finally, we applied this approach to demonstrate a flexible metal-on-silicon thermocouple with enhanced thermal sensitivity. The outstanding performance of our thermocouple combined with an extremely thin profile, bending flexibility, and simple, highly-compatible fabrication will proliferate its use in diverse applications such as micro-/nanoscale biometrics, energy management, and nanoscale thermography.

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“…In the semiconductor manufacturing industry the application of chemical and electrochemical etching techniques was dated back to the 1950s (16)(17)(18)(19), when the techniques were mainly used for etching, chemical polishing, selective etching, and the evaluation of semiconductor materials as well as process-induced defects. It was in the early 1970s, when silicon was suggested as a potential material for various kinds of microsensor fabrication because of its excellent mechanical and electrical properties, as well as the possibility of integrating sensors with signal processing circuits in one chip (20)(21)(22). One of the important processing techniques in silicon microsensor fabrication, which is not among the well established microelectronic technologies, is selective etching a thin diaphragm of precise size and thickness in silicon wafer.…”

mentioning

confidence: 99%

Anodic Dissolution and Passivation of Silicon in Hydrazine

Huang

1990

J. Electrochem. Soc.

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Anodic dissolution and passivation of silicon in aqueous hydrazine (N2H4H20) has been studied. The current-voltage characteristics of anodic-biased silicon wafers, (100) oriented n-and p-type with various doping concentrations, in hydrazine were examined. It is found that there is a critical current density for anodic biased silicon to be passivated in hydrazine solution. A mechanism of p-n junction etch-stop is proposed in which p-n junction leakage current and critical passiration current density (CPI) are two determining parameters. For n-type silicon, the CPI is found to be about 60 ~A]mm 2, independent of its resistivity; whereas for p-type silicon the CPI depends on silicon resistivity. The different behavior of anodic biased n-and p-type silicon wafers in hydrazine is attributed to the existence of surface states and their effects on the surface potential as well as the availability of holes at surface.

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Silicon sensors: full of promises and pitfalls

Cited by 22 publications

References 23 publications

A GaAs pressure sensor based on resonant tunnelling diodes

A GaAs pressure sensor based on resonant tunnelling diodes

High-performance flexible metal-on-silicon thermocouple

Anodic Dissolution and Passivation of Silicon in Hydrazine

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