Silicon RF devices fabricated by ULSI processes featuring 0.1-μm SOI-CMOS and suspended inductors

Hisamoto, D.; Tanaka, Satoshi; Tanimoto, T.; Nakamura, Yusuke; Kimura, S.

doi:10.1109/vlsit.1996.507810

Cited by 8 publications

(3 citation statements)

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“…The reported here is comparable to that of SiGe bipolar transistors with an of 90 GHz [7] and is lower than MOSFETs with higher [5], [6], including a bulk-Si T-gate MOSFET [4] as well as a 0.1-m gate length partially-depleted SOI [8]. The noise power generated in our n-MOSFET, using the formula in [5], is 166 dBm/Hz, which is better than the 165 dBm/Hz for a GaAs MESFET and comparable to the 171 dBm/Hz for bulk-Si MOSFETs [5].…”

Section: Resultsmentioning

confidence: 58%

High-performance fully-depleted SOI RF CMOS

Chen

Spector

Blumgold

et al. 2002

IEEE Electron Device Lett.

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A T-gate structure has been implemented in the fabrication of fully depleted silicon-on-insulator MOSFETs. The T-gate process is fully compatible with the standard CMOS and the resulting reduction of gate-resistance significantly improved the RF performance. Measured max is 76 GHz and 63 GHz for n-and p-MOSFET with 0.2-m gate length, respectively. At 2 GHz, a minimum noise figure of 0.4 dB was measured on an n-MOSFET with the T-gate structure.

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Section: Resultsmentioning

confidence: 58%

High-performance fully-depleted SOI RF CMOS

Chen

Spector

Blumgold

et al. 2002

IEEE Electron Device Lett.

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“…2. The proton fluence was set to 0018-9383/01$10.00 © 2001 IEEE 10 10 cm at 15 MeV to simulate dose of the proton bombardment during the integration process. The projected range of the 15 MeV proton was approximately 1500 m, which was much larger than the thickness of silicon wafers used in this experiment.…”

Section: Methodsmentioning

confidence: 99%

“…Cooling water ran through the inner layer of the aluminum mask to maintain the mask at the room temperature. For the direct-write study, the proton fluence was chosen to be 10 10 cm and also at 15 MeV. No masks were used and wafers of resistivities of 15, 70, and 140 -cm, which were relatively higher than the 3 5 -cm resistivity of the conventional wafer, were used.…”

Section: Methodsmentioning

confidence: 99%

Isolation on Si wafers by MeV proton bombardment for RF integrated circuits

Lee

Liao

Lee

et al. 2001

IEEE Trans. Electron Devices

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where he has been engaged in teaching and research in the fields of semiconductor devices, integrated circuits, VLSI, and computer-aided design and testing. He has supervised more than 100 M.S. and Ph.D. students to complete their theses and has published more than 200 papers in the above areas. He has been involved in various technical activities in the above areas in Taiwan and other parts of Asia. Dr. Lee is on the Editorial Board of JETTA. Tzuen-His Huang, photograph and biography not available at the time of publication. Denny Duan-Lee Tang, photograph and biography not available at the time of publication. Ting Shien Duh, photograph and biography not available at the time of publication. Tsing-Tyan Yang, photograph and biography not available at the time of publication.

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