Silicon Photonics for Quantum Communication

Ding, Yunhong; Bacco, Davide; Llewellyn, D.; Faruque, Imad I.; Paesani, Stefano; Galili, Michael; Laing, Anthony; Rottwitt, Karsten; Thompson, Mark G.; Wang, J.; Oxenlnwe, Leif Katsuo

doi:10.1109/icton.2019.8840038

Cited by 6 publications

(3 citation statements)

References 12 publications

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“…46,47 Chip-based applications employ silicon photonics as a basic building component for waveguide connections using an optical fiber to create an optical input/output (I/O). 48,49 The input and output connectors can be vertical or threshold, with tape to broaden the mode and properly align mono-mode fibers.…”

Section: Overview Of Silicon Photonicsmentioning

confidence: 99%

Silicon photonics interfaced with microelectronics for integrated photonic quantum technologies: a new era in advanced quantum computers and quantum communications?

et al. 2023

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Section: Overview Of Silicon Photonicsmentioning

confidence: 99%

Silicon photonics interfaced with microelectronics for integrated photonic quantum technologies: a new era in advanced quantum computers and quantum communications?

et al. 2023

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“…They are used for photon detection in quantum communication systems, like e.g. for quantum key distribution [7], [8]. The random appearance of SPAD counts, e.g.…”

Section: Introductionmentioning

confidence: 99%

Cascoded Active Quencher for SPADs With Bipolar Differential Amplifier in 0.35 μm BiCMOS

2022

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Fast active quenching of single-photon avalanche diodes (SPADs) is important to reduce the afterpulsing probability (APP). An option to reduce the reaction time of electronics to a SPAD's avalanche is to design a quencher exploiting bipolar transistors. A quencher in a 0.35µm CMOS technology with a nominal supply voltage of 3.3V, which operated with excess bias voltages up to 6.6V, was re-designed accordingly. In the new 0.35µm pure-silicon BiCMOS quencher, the comparator takes advantage of a bipolar differential amplifier, which additionally gives the head room to increase the width of some CMOS transistors as well. The proposed BiCMOS quencher is able to drive the load of a wire-bonded 184µm-diameter SPAD, while the CMOS design fails. A comparison, where both chips are measured with a wire-bonded, 34µm-diameter SPAD, shows that the BiCMOS quencher has a reaction time, which is 330ps to 1.1ns faster than that of the CMOS quencher.

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“…SPADs are important in applications like photon detectors for quantum communications [ 7 , 8 ] and quantum random number generators [ 9 , 10 , 11 ]. Recently, many multi-pixel image sensors with SPADs were published [ 12 , 13 , 14 , 15 , 16 , 17 ], some for 3D imaging.…”

Section: Introductionmentioning

confidence: 99%

Avalanche Transients of Thick 0.35 µm CMOS Single-Photon Avalanche Diodes

2020

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Two types of single-photon avalanche diodes (SPADs) with different diameters are investigated regarding their avalanche behavior. SPAD type A was designed in standard 0.35-µm complementary metal-oxide-semiconductor (CMOS) including a 12-µm thick p- epi-layer with diameters of 50, 100, 200, and 400 µm; and type B was implemented in the high-voltage (HV) line of this process with diameters of 48.2 and 98.2 µm. Each SPAD is wire-bonded to a 0.35-µm CMOS clocked gating chip, which controls charge up to a maximum 6.6-V excess bias, active, and quench phase as well as readout during one clock period. Measurements of the cathode voltage after photon hits at SPAD type A resulted in fall times (80 to 20%) of 10.2 ns for the 50-µm diameter SPAD for an excess bias of 4.2 V and 3.45 ns for the 200-µm diameter device for an excess bias of 4.26 V. For type B, fall times of 8 ns for 48.2-µm diameter and 5.4-V excess bias as well as 2 ns for 98.2-µm diameter and 5.9-V excess bias were determined. In measuring the whole capacitance at the cathode of the SPAD with gating chip connected, the avalanche currents through the detector were calculated. This resulted in peak avalanche currents of, e.g., 1.19 mA for the 100-µm SPAD type A and 1.64 mA for the 98.2-µm SPAD type B for an excess bias of 5 and 4.9 V, respectively.

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Silicon Photonics for Quantum Communication

Cited by 6 publications

References 12 publications

Silicon photonics interfaced with microelectronics for integrated photonic quantum technologies: a new era in advanced quantum computers and quantum communications?

Silicon photonics interfaced with microelectronics for integrated photonic quantum technologies: a new era in advanced quantum computers and quantum communications?

Cascoded Active Quencher for SPADs With Bipolar Differential Amplifier in 0.35 μm BiCMOS

Avalanche Transients of Thick 0.35 µm CMOS Single-Photon Avalanche Diodes

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