Silicon Oxidation Studies: The Role of  H 2 O

Abstract

The thermal oxidation of Si using H20-O2 and H20-N2 ambients has been studied with an automated ellipsometer which can observe the oxidation in situ. The oxidations were carried out in the temperature range of 780 ~ * Electrochemical Society Active Member.

Models for the oxidation of silicon

“…However, the use of H 20 gives rise to a large number of bulk oxide charge trapping centers which, when charged, also alter the Si surface potential as does Na at the interface and affects the electric reliability of the and k are enhanced. For the overall rate of oxidation the amount of enhancement was * p found to be greater than for 02 and H 0 present as independent oxidants ie., there is a cooperative effect (69). Essentially, his arises from the fact that H20 reacts with the SiO2 network forming SiOH species and thereby terminating the Si-O-Si chains.…”

The morphological evolution of the oxide products of Si₃N₄/Al₂O₃ composite refractory under different oxidizing conditions

“…Subsequently, H 2 O vapor enters and dissolves in SiO 2 scale in large amount. 30) As a result, H 2 O can easily approach and react with unreacted Si 3 N 4 beneath the SiO 2 scale, thus accelerating the reaction rate. Due to the accelerated reaction, massive gas products accumulate in the SiO 2 scale.…”

Influence of oxidation on fatigue life of a carbon/silicon carbide composite in water vapor containing environments

“…Although the viscous silica layer can seal the coating cracks, water vapor may react with silica and forms SiOH group, which interrupts the SiO 2 network [6]. The destroyed SiO 2 network makes water vapor diffuse more quickly, and thereby increases the oxidation of SiC.…”