1988
DOI: 10.1080/10408438808242183
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Models for the oxidation of silicon

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Cited by 93 publications
(43 citation statements)
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References 139 publications
(32 reference statements)
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“…19 According to the LP model, the relationship between film thickness, L, and oxidation time, t, is:…”
Section: H Experimental Procedures and Data Analysismentioning
confidence: 99%
“…19 According to the LP model, the relationship between film thickness, L, and oxidation time, t, is:…”
Section: H Experimental Procedures and Data Analysismentioning
confidence: 99%
“…It should be noted that all those constants vary with temperature and that the so called 'help time', T , can be of appreciable length: For silicon at 1700°C we have a time of at least several tens of hours, during which the kinetics are basically linear! A nice review of the complexity of the 'simple' parabolic oxidation of Si, particularly in its initial stages, has been given by Irene [20].…”
Section: Basic Passive Corrosion Kineticsmentioning
confidence: 99%
“…(20) because only the Na20 is attacking the protective scale of Si02 by This is the reason why other compounds releasing alkali oxide on decomposition, such as Na2C03, have similar hot corrosion effects. It should be noted that complex salts, in particular those containing vanadium, can have an even stronger hot corrosion effect, as is well known from metals and oxides [69,70].…”
Section: Corrosion By Salt Melts (Hot Corrosion)mentioning
confidence: 99%
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“…This is called electronic passivation, and it has not been realized to the same extent with any other semiconductor/dielectric combination. Although oxidation of Si occurs naturally in air, high-quality oxides with controllable properties and thickness are usually prepared by the thermal oxidation of extremely clean single crystal Si wafers at 900-1000 o C 20 . The Si/SiO 2 interface has been extensively studied using ellipsometry.…”
Section: Applications Si/sio 2 Systemmentioning
confidence: 99%