Silicon-Organic Hybrid (SOH) Modulator Generating up to 84 Gbit/s BPSK and M-ASK Signals

Palmer, R.; Alloatti, Luca; Korn, D.; Schindler, P. C.; Schmogrow, R.; Baier, Moritz; Koenig, S.; Hillerkuss, D.; Bolten, Jens; Wahlbrink, T.; Waldow, Michael; Dinu, Raluca; Freude, W.; Koos, C.; Leuthold, Juerg

doi:10.1364/ofc.2013.ow4j.6

Cited by 6 publications

(9 citation statements)

References 11 publications

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“…It is possible to reduce the energy consumption to a few fJ/bit by increasing the modulator length to 1 mm and simultaneously reducing the drive voltage below 400 mV pp as reported in [4]. Note that, in contrast to earlier demonstrations of 40 Gbit/s modulation in SOH devices [11], [14], we did not use a gate voltage to improve the silicon conductivity. Still, a small voltagelength product of 1 Vmm is found for operation at 40 Gbit/s, one order of magnitude below typical values reported for reversebiased pn-modulators [1], [5].…”

Section: B Ook Modulationmentioning

confidence: 99%

High-Speed, Low Drive-Voltage Silicon-Organic Hybrid Modulator Based on a Binary-Chromophore Electro-Optic Material

Palmer

Koeber

Elder

et al. 2014

J. Lightwave Technol.

138

133

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Abstract-We report on the hybrid integration of silicon-oninsulator slot waveguides with organic electro-optic materials. We investigate and compare a polymer composite, a dendron-based material, and a binary-chromophore organic glass (BCOG). A record-high in-device electro-optic coefficient of 230 pm/V is found for the BCOG approach resulting in silicon-organic hybrid MachZehnder modulators that feature low U π L-products of down to 0.52 Vmm and support data rates of up to 40 Gbit/s.

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Section: B Ook Modulationmentioning

confidence: 99%

High-Speed, Low Drive-Voltage Silicon-Organic Hybrid Modulator Based on a Binary-Chromophore Electro-Optic Material

Palmer

Koeber

Elder

et al. 2014

J. Lightwave Technol.

138

133

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“…Since silicon has a centrosymmetric crystal structure, second-order nonlinearities are forbidden in the dipole approximation. Recently, several approaches have been developed to endow silicon waveguides with second-order nonlinearity [2][3][4][5][6][7][8][9][10][11][12][13]. This is not only important for modulation applications but also for other nonlinear optical processes like difference frequency generation as e.g.…”

Section: Introductionmentioning

confidence: 99%

“…A known method is to cover the silicon nanophotonic waveguide with a cladding layer of nonlinear active material. The evanescent field of a propagating guided mode in such a structure interacts with the nonlinear active cladding and generates an effective second-order nonlinearity [5][6][7][8][9]. Alternative to such hybrid approaches another basically different solution is to break the centrosymmetry of the silicon lattice itself by strain [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Electro-optic light modulation and THz generation in locally plasma-activated silicon nanophotonic devices

Matheisen¹,

Waldow²,

Chmielak³

et al. 2014

Opt. Express

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Silicon is not an electro-optic material by itself but the required second-order optical nonlinearity can be induced by breaking the inversion symmetry of the crystal lattice. Recently, an attractive approach has been demonstrated based on a surface-activation in a CMOS-compatible HBr dry etching process. In this work, we further investigate and quantify the second-order nonlinearity induced by this process. Using THz near-field probing we demonstrate that this simple and versatile process can be applied to locally equip silicon nanophotonic chips with micro-scale areas of electro-optic activity. The realization of a first fully integrated Mach-Zehnder modulator device - based on this process - is applied to quantify the nonlinearity to an effective χ((2)) of 9 ± 1 pm/V. Analysis of the thermal stability of the induced nonlinearity reveals post-processing limitations and paths for further efficiency improvements.

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“…Electro-optic polymers have shown to possess very high electro-optic coefficient, and over 100GHz modulators have been demonstrated [193][194][195]. By incorporating such polymers, within silicon photonic structures, several interesting modulator devices have been realized [196][197][198][199][200][201][202][203][204][205][206]. In [204] a 42.7Gbps modulator was demonstrated utilizing silicon-organic hybrid structure.…”

Section: Complementary Technologies On Silicon Platformmentioning

confidence: 99%

“…In [205] a modulator with a record low driving voltage of Vπ< 200 mV at 10 GHz was achieved. In [202], up to 84Gbps BPSK modulation was demonstrated. By combining the slow-light effect in photonic crystal waveguides, large confinement within a sub-wavelength slot, and the large EO coefficient of the polymers, ultracompact modulators can be achieved [199,203,207].…”

Section: Complementary Technologies On Silicon Platformmentioning

confidence: 99%

Recent advances in silicon-based passive and active optical interconnects

Subbaraman¹,

Xu²,

Hosseini³

et al. 2015

Opt. Express

253

121

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Silicon photonics has experienced phenomenal transformations over the last decade. In this paper, we present some of the notable advances in silicon-based passive and active optical interconnect components, and highlight some of our key contributions. Light is also cast on few other parallel technologies that are working in tandem with silicon-based structures, and providing unique functions not achievable with any single system acting alone. With an increasing utilization of CMOS foundries for silicon photonics fabrication, a viable path for realizing extremely low-cost integrated optoelectronics has been paved. These advances are expected to benefit several application domains in the years to come, including communication networks, sensing, and nonlinear systems.

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Silicon-Organic Hybrid (SOH) Modulator Generating up to 84 Gbit/s BPSK and M-ASK Signals

Cited by 6 publications

References 11 publications

High-Speed, Low Drive-Voltage Silicon-Organic Hybrid Modulator Based on a Binary-Chromophore Electro-Optic Material

High-Speed, Low Drive-Voltage Silicon-Organic Hybrid Modulator Based on a Binary-Chromophore Electro-Optic Material

Electro-optic light modulation and THz generation in locally plasma-activated silicon nanophotonic devices

Recent advances in silicon-based passive and active optical interconnects

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