Silicon-on-insulator (SOI) by bonding and ETCH-back

Lasky, J. B.; Stiffler, S. R.; White, F. R.; Abernathey, J. R.

doi:10.1109/iedm.1985.191067

Cited by 68 publications

(39 citation statements)

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“…Lasky et al 5,6 from IBM covered one or both wafer surfaces with a thick thermal silicon dioxide layer while Shimbo et al 7 at Toshiba reported this form of bonding without the prior growth of any thermal oxide.…”

Section: History and Establishment Of The Artmentioning

confidence: 99%

“…Although the first explicit direct wafer bonding literature was published in 1985 6 the theoretical background was established much earlier. The 1969 paper by C. G. Armistead et al 9 provides a description of how silica (silicon dioxide) and hydroxyl (Si-OH, or OH groups) are arranged on a silicon surface that is still frequently referenced today.…”

Section: History and Establishment Of The Artmentioning

confidence: 99%

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A Review of Hydrophilic Silicon Wafer Bonding

Masteika

Kowal

Braithwaite

et al. 2014

ECS J. Solid State Sci. Technol.

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Hydrophilically activated direct wafer bonding is a technique for gluelessly attaching oxide-coated wafers together. This ability is a vital step in the construction of many microelectronic and microelectromechanical (MEMS) devices. In particular this technique is widely used in the production of 3d interconnected devices due to the lack of interlayer. © 2014 The Electrochemical Society. [DOI: 10.1149/2.007403jss] All rights reserved.Manuscript submitted June 5, 2013; revised manuscript received December 9, 2013. Published February 3, 2014 This review covers the key papers relating to the theory, techniques and quantification of hydrophilically activated silicon wafer bonding. This begins with a review of the history and development of the art. Bond strength characterization is then reviewed followed first by models of physical deformation and then by plasma and radical activation techniques.In the interests of clarity and succinctness this review is not an attempt to exhaustively catalog all direct bonding wafer literature. Excluded are hydrophobic and UHV bonding, and the many papers applying bonding techniques to differing combinations of wafer materials. This paper concludes with a summery of the state of the art of direct wafer bonding and a summation of the current wafer-bonding model derived from the papers reviewed. History and Establishment of the Art

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Section: History and Establishment Of The Artmentioning

confidence: 99%

Section: History and Establishment Of The Artmentioning

confidence: 99%

A Review of Hydrophilic Silicon Wafer Bonding

Masteika

Kowal

Braithwaite

et al. 2014

ECS J. Solid State Sci. Technol.

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show abstract

“…Established knowledge gave rise to numerous developments in bulk micromachining techniques which continued to chip away at diaphragm dimensions, bringing them down to hundreds of microns in length and several microns in thickness [25][26][27][28]. Interest in micromachined capacitive sensors also began during this period, which would eventually enable resonant sensing for wireless implantable applications [29].…”

Section: Early History and Overviewmentioning

confidence: 99%

Evolution of micromachined pressure transducers for cardiovascular applications

Starr

Bartels

Agrawal

et al. 2015

Sensors and Actuators A: Physical

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“…Widespread interest in modern wafer bonding techniques was generated by reports on silicon-silicon wafer bonding about 20 years ago [9][10][11]. Semiconductor wafer direct bonding (SWDB) requires wafers with a high degree of flatness, parallelism and smoothness.…”

Section: Physics and Chemistry Of Semiconductor Wafer Direct Bondingmentioning

confidence: 99%

Wafer bonding in silicon electronics

Reiche

2009

Phys. Status Solidi (c)

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Semiconductor wafer bonding offers a new degree of freedom in the design of material combinations without the common restrictions of the structure of the materials bonded. It is already an established method for the industrial production of advanced substrates (SOI) applied as basic material in high‐performance device fabrication. SOI, i.e. a thin device layer on an insulator, is a promising concept for further device developments. The advantages of SOI can be combined with mobility enhancing materials such as strained silicon (SSOI) or germanium on insulator (GOI). The bonding process is not limited to a certain wafer diameter and is applicable to different material combinations which are important to integrate different functions on a chip (system on a chip, SoC). (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Silicon-on-insulator (SOI) by bonding and ETCH-back

Cited by 68 publications

References 0 publications

A Review of Hydrophilic Silicon Wafer Bonding

A Review of Hydrophilic Silicon Wafer Bonding

Evolution of micromachined pressure transducers for cardiovascular applications

Wafer bonding in silicon electronics

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