Silicon Nitride Thin Films from SiCl[sub 4] Plus NH[sub 3]: Preparation and Properties

Abstract

Silicon nitride thin films have been deposited on silicon substrates by reacting SIC14 and NH3 at 550~176The effects of deposition temperature and of SIC14 and NH3 concentrations on the deposition rate have been studied. The etch rate of the deposited films is shown to be a function of the deposition temperature. Electrical evaluation has shown the dielectric strength to be independent of contact area and film thickness and the dielectric constant to be in the range seven to eight. Surface charge plus surface state density values range from 7 to 18 x 10H/cm ". Nonlinear I-V characteristics of the films have been observed. The deposited films are extremely effective diffusion masks for sodium.

Oxynitride Deposition Kinetics in a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 System

“…Appendix A) foxy : r'SisN4 -~ r'sio2 [11] where r's~ax~ is not equal to rsi3N4 and r'sio2 is not equal to rsio2. The rsia.…”

“…We preferred Sill4 because it eliminates the possibility of NH~C1 formation and associated difficulties (11). NH3 is used as the nitriding agent without exception.…”

The Role of Homogeneous Reactions in Chemical Vapor Deposition

“…The "critical nucleus" is then just one molecule and every This quantity depends on the fluid mechanical and thermal properties of the flow and can be calculated by well-known methods; an example is given later. Equation [3] now applies to each point, y, along the substrate. Normal to each point there is a gas phase temperature distribution, T(x).…”

“…[3] to dimensionless form using the following definitions As To increases, M increases rapidly until the rate of dimerization becomes comparable with the rate of film formation. Dimers are followed by larger clusters, and at higher M most of the reaction product is in the form of particles rather than film.…”

Silicon Nitride (Si3N4) (Noncrystalline)

“…Samples prepared by hightemperature pyrolysis are generally considered to have, or come close to, the ideal stoichiometry, Si3N4 (exclusive of hydrogen content).While there have been a number of studies on the optical properties of silicon nitride materials, the data have generally been limited to the evaluation of the index of refraction in the visible region of the spectrum [1][2][3][4][5][6][7][8][9][10][11][12][13][14] and to infrared measurements of the lattice absorption bands near 11 #m and other bands, particularly those which show up N-H and Si-H bonding [1-7, 9, 12, 15-20]. In this application it is used in thin-film form and can be prepared by a variety of deposition techniques, including (a) pyrolytic decomposition of a mixture of gases containing silicon and nitrogen (for example, Sill 4 and NH3), (b) sputtering, and (c) rf glow-discharge techniques.…”