Silicon nitride and oxynitride films

Habraken, F.H.P.M.; Kuiper, A. E. T.

doi:10.1016/0927-796x(94)90006-x

Cited by 152 publications

(66 citation statements)

References 243 publications

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“…It means that the sputtering damage should be considered during the deposition of the film. F. H. P. M. Habraken and P. Balk et al reported that the active hydrogen diffuses through pores and reaches the Si-SiN interface and reacts as Si-H to form a silane bond [16,17]. B. Swaroop further suggested that the effect of hydrogen was observed for the SiN-Si interface annealed in atomic hydrogen, which reduced the D it [18].…”

Section: Resultsmentioning

confidence: 99%

Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering

Han

Ohmi

2012

IEICE Electron. Express

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Abstract:We investigated nitrogen-rich HfN insulator on p-Si(100) substrate to prevent to form an interface layer with low dielectric constant by electron-cyclotron-resonance plasma sputtering method for the first time. The nitrogen concentration in the deposited HfN film was confirmed as approximately Hf:N = 1:1.2. Furthermore, the electrical properties of Al/HfN/p-Si(100) gate stack were improved by hydrogen anneal compared to nitrogen (N 2 ) anneal. The EOT of 0.64 nm with low leakage current of 6.2 × 10 −4 A/cm 2 (@ V FB -1 V) was obtained. The results suggest that the effect of hydrogen anneal attributed to improve the electrical properties of HfN gate dielectric. Keywords: hafnium nitride, hydrogen anneal, ECR plasma sputtering Classification: Electron devices, circuits, and systems References[1] M. Gutowski, J. E. Jaffe, C. L. Liu, M. Stoker, R. I. Hegde, R. S. Rai, and P. J. Tobin, "Thermodynamic stability of high-k dielectric metal oxides ZrO 2 and HfO 2 in contact with Si and SiO 2 ," Appl. Phys. Lett., vol. 80, no. 11, pp. 1897Lett., vol. 80, no. 11, pp. -1899Lett., vol. 80, no. 11, pp. , 2002

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Section: Resultsmentioning

confidence: 99%

Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering

Han

Ohmi

2012

IEICE Electron. Express

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“…62 Dichlorosilane (SiH 2 Cl 2 ) and ammonia (NH 3 ) source gases are mixed in reduced-pressure furnaces at <1000 C and deposited, in our applications, onto polished Si (100) wafers. 62,66 The film stoichiometry-and consequently its residual stress-is controlled by tuning the two source gas feeds. 62 Enriching the relative amount of silicon in fabricating the non-stoichiometric (silicon-rich), amorphous films controls the residual stress and is responsible for what is, to us, the most dramatic property of SiN x films: their ability to withstand large cross-membrane pressure differences.…”

Section: Thin-film Silicon Nitride Membranesmentioning

confidence: 99%

“…20,64,66,[102][103][104][105][106] This history dependence can perhaps be appreciated most easily through a survey of the silicon oxynitride (SiO x N y ) literature, or through the variability of experimental outcomes when proper care is not taken. 66,107,108 A surface oxide coating readily forms in air (and can lead to an oxide gradient into the film), 102,108,109 and the susceptibility of Si 3 N 4 to evolve ammonia by hydrolysis in the presence of liquid-and vapor-phase water should also be considered. 102,103 In spite of this, SiN x shows very strong chemical resistance to a wide range of etchants and conditions, and indeed, etch resistance is the mechanism by which the film is made freestanding.…”

Section: Thin-film Silicon Nitride Membranesmentioning

confidence: 99%

Through a Window, Brightly: A Review of Selected Nanofabricated Thin-Film Platforms for Spectroscopy, Imaging, and Detection

Dwyer

Harb

2017

Appl Spectrosc

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We present a review of the use of selected nanofabricated thin films to deliver a host of capabilities and insights spanning bioanalytical and biophysical chemistry, materials science, and fundamental molecular-level research. We discuss approaches where thin films have been vital, enabling experimental studies using a variety of optical spectroscopies across the visible and infrared spectral range, electron microscopies, and related techniques such as electron energy loss spectroscopy, X-ray photoelectron spectroscopy, and single molecule sensing. We anchor this broad discussion by highlighting two particularly exciting exemplars: a thin-walled nanofluidic sample cell concept that has advanced the discovery horizons of ultrafast spectroscopy and of electron microscopy investigations of in-liquid samples; and a unique class of thin-film-based nanofluidic devices, designed around a nanopore, with expansive prospects for single molecule sensing. Free-standing, low-stress silicon nitride membranes are a canonical structural element for these applications, and we elucidate the fabrication and resulting features-including mechanical stability, optical properties, X-ray and electron scattering properties, and chemical natureof this material in this format. We also outline design and performance principles and include a discussion of underlying material preparations and properties suitable for understanding the use of alternative thin-film materials such as graphene.

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“…Si x N y H z + H 2 . The resulting silicon nitride is contaminated by hydrogen occurring from reagents [5,6]. Low temperature deposition is not favorable for hydrogen desorption and results in N-H and Si-H bondings, porosity and a non-stoichiometric structure.…”

Section: Introductionmentioning

confidence: 99%

“…The characteristics of these layers are influenced by the deposition methods and parameters. Among the different procedures used to deposit silicon nitride [5], Plasma Enhanced Chemical Vapor Deposition (PECVD) is predominant. The advantage of this method is the low temperature deposition (25-400°C) due to the plasma chemistry.…”

Section: Introductionmentioning

confidence: 99%

Hypothetic impact of chemical bonding on the moisture resistance of amorphous Si_xN_yH_z by plasma-enhanced chemical vapor deposition

Cazako

Inal

Burr

et al. 2018

Metall. Res. Technol.

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Abstract. The relationship between the microstructure of silicon nitride and its sensitivity to moisture was studied. The effectiveness of Si-H rich and N-H rich silicon nitride layers was measured under attack from water in vapor and liquid states. For water vapor attack, samples are exposed to vapor at 85°C with a relative humidity of 85% during 1600 hours; for liquid water attack, samples are dipped in water at 60, 85 and 100°C for 200 hours. The water resistance of the Si-H rich and N-H rich silicon nitride layers was evaluated by measuring: (i) the thickness of the silicon dioxide formed after their oxidation with water vapor, (ii) the rate of dissolution of the silicon nitride in liquid water and (iii) the corresponding activation of energy. This evaluation was performed by coupling spectroscopic ellipsometry, infra-red and X-ray photoelectron spectrometry analyses. The results revealed that for Si-H rich layer, 10 nm of silicon dioxide was formed during the water vapor attack; for liquid water attack, a high activation energy (0.88 eV) and a low dissolution rate were observed regardless of the water temperature. For N-H rich layers, approximatively 6-8 nm of silicon dioxide was formed and a low activation energy (0.64 eV) with a high dissolution rate were observed. All of these observations lead to the conclusion that the N-H rich layers could be less resistant to moisture because the isoelectronic relationship between Si 2 N-H and ÀH 2 O + facilitated their deterioration in water. Moreover, a higher rate of nanoporosity for N-H rich layers than Si-H rich layer could complete this hypothesis.

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Silicon nitride and oxynitride films

Cited by 152 publications

References 243 publications

Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering

Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering

Through a Window, Brightly: A Review of Selected Nanofabricated Thin-Film Platforms for Spectroscopy, Imaging, and Detection

Hypothetic impact of chemical bonding on the moisture resistance of amorphous Si_xN_yH_z by plasma-enhanced chemical vapor deposition

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Silicon nitride and oxynitride films

Cited by 152 publications

References 243 publications

Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering

Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering

Through a Window, Brightly: A Review of Selected Nanofabricated Thin-Film Platforms for Spectroscopy, Imaging, and Detection

Hypothetic impact of chemical bonding on the moisture resistance of amorphous SixNyHz by plasma-enhanced chemical vapor deposition

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Hypothetic impact of chemical bonding on the moisture resistance of amorphous Si_xN_yH_z by plasma-enhanced chemical vapor deposition