Silicon nitride and oxynitride deposition by RT-LPCVD

Semmache, B.; Lemiti, M.; Chaneliere, C.; Dubois, C.; Sibaï, A.; Canut, B.; Laugier, A.

doi:10.1016/s0040-6090(96)09333-9

Cited by 22 publications

(14 citation statements)

References 12 publications

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“…Silicon nitride films were prepared in an industrial type LPCVD reactor by using the reaction of diluted silane (SiH 4 /Ar = 10%) with ammonia (NH 3 ) at a temperature of 800°C [7]. The film thickness and density were 140 nm and 3.1 g cm À3 , respectively, according to profilometry measurements and Rutherford backscattering spectrometry (RBS).…”

Section: Methodsmentioning

confidence: 99%

Ion-induced tracks in amorphous Si3N4 films

Canut¹,

Ayari²,

Kaja³

et al. 2008

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Methodsmentioning

confidence: 99%

Ion-induced tracks in amorphous Si3N4 films

Canut¹,

Ayari²,

Kaja³

et al. 2008

Nuclear Instruments and Methods in Physics Research Section B:

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“…There is no decrease of the Si-H stretching modes, ϳ2100 cm −1 [ Fig. 22 This apparent discrepancy indicates that the as grown, predominantly Si x N y film is heavily oxidized to form oxynitride during the transfer from the growth to the MEIS chamber. 22) [ Fig.…”

mentioning

confidence: 99%

Ammonia pretreatment for high-κ dielectric growth on silicon

Brewer

Zhang

et al. 2004

Applied Physics Letters

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“…However, usually the authors do not give any details on the instrument used, the analytical parameters, or the quantification procedures [92,93]. Sometimes the interpretation of SIMS depth profiles is attempted without considering the background pressure and the changes of sputtering rate at interfaces [168]. Quantification of stoichiometric SiO X N Y and AlO X N Y films with SIMS is especially difficult since the films are electrically insulating.…”

Section: Secondary Ion Mass Spectrometrymentioning

confidence: 99%

Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report)

Dreer¹,

Wilhartitz²

2004

Pure and Applied Chemistry

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The quantitative analysis of thin films containing light elements is very important in improving the coating processes and technological properties of the products. In order to review the state of the art of modern analytical techniques for such applications, the model systems SiOXNY and AlOXNY were selected. Over 1000 abstracts were screened, and the relevant literature was evaluated to give a comprehensive overview of instruments, analytical procedures and results, film types, deposition methods, and investigation goals. From more than 150 citations, the limitations, drawbacks, and pitfalls of the different methods were extracted and reviewed critically, while in addition, improvements were proposed where possible. These suggestions are combined with the newest results of investigation by the authors of this paper. Recommendations concerning the optimized combination of analytical methods for different analytical problems have been worked out on the basis of all results. Analysis of various multicomponent systems containing light elements demonstrated the applicability of the different methods of analysis in combination to all film systems with related compositions.

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Silicon nitride and oxynitride deposition by RT-LPCVD

Cited by 22 publications

References 12 publications

Ion-induced tracks in amorphous Si3N4 films

Ion-induced tracks in amorphous Si3N4 films

Ammonia pretreatment for high-κ dielectric growth on silicon

Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report)

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