2011 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems 2011
DOI: 10.1109/nems.2011.6017434
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Silicon nanowire temperature sensor and its characteristic

Abstract: silicon nanowires (SiNWs) with well orientation and crystallization are synthesized by the vapor-liquid-solid (VLS) process, and doped as n-type by an ex situ process using spin on dopant (SOD) technique. The ex situ doping process using SOD was based on solid-state diffusion, which comprised two stages: pre-coating and drive in. The phosphorous concentration in SiNWs was controlled by appropriate selections of the drive in temperature and the time period, which are 950 o C and 5-60 min in the present studies.… Show more

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Cited by 18 publications
(12 citation statements)
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“…In comparison with other temperature sensors such as strings and bimetallic geometries relying on optical readout [20,[28][29][30], the PEDOT:TsO nanowire only requires a 2 point electrical readout that, due to the small impedance, in principle can be read using a multimeter depending on the desired precision. Temperature measurement with nanowire structures is not a new principle and has previously been demonstrated with both PEDOT nanowires [15] and nanowires of other materials [31][32][33]. The PEDOT:TsO nanowire fabricated in this work has a much lower resistivity than the previously demonstrated nanowire devices.…”
Section: Temperature Measurementsmentioning
confidence: 80%
“…In comparison with other temperature sensors such as strings and bimetallic geometries relying on optical readout [20,[28][29][30], the PEDOT:TsO nanowire only requires a 2 point electrical readout that, due to the small impedance, in principle can be read using a multimeter depending on the desired precision. Temperature measurement with nanowire structures is not a new principle and has previously been demonstrated with both PEDOT nanowires [15] and nanowires of other materials [31][32][33]. The PEDOT:TsO nanowire fabricated in this work has a much lower resistivity than the previously demonstrated nanowire devices.…”
Section: Temperature Measurementsmentioning
confidence: 80%
“…The temperature and resistance of the heating film exposed to the air flow could be measured easily if the TCR is higher for the material and vice-versa. 74 For instance, the thermal sensors proposed in 75,76 provides low thermoresistive sensitivity and so sensing temperature changes is challenging. Consequently, the resistance change (∆Rh/Rh) is generally converted into voltage (∆Vh) change by a Wheatstone bridge circuit and amplified later to observe the sensor response.…”
Section: High Temperature Flow Testingmentioning
confidence: 99%
“…The temperature detection during the flow could be very easy if the TCR is higher for the sensor material and vice-versa. For example, the thermal sensors proposed in [53,54] offers low thermoresistive sensitivity and so sensing temperature changes is very difficult. As a result, the relative resistance change (∆R/R) is commonly converted into voltage (∆V) change by a Wheatstone bridge circuit and amplified thereafter to observe the flow response.…”
Section: Accepted Manuscriptmentioning
confidence: 99%