Silicon Nanofabrication by Atomic Force Microscopy-Based Mechanical Processing

Miyake, Shojiro; Wang, Mei; Kim, Jongduk

doi:10.1155/2014/102404

Cited by 23 publications

(11 citation statements)

References 41 publications

(105 reference statements)

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“…However, when chemical methods are mixed with mechanical processes, precision can be extended to the atomic scale because the mechanical energy can be used to activate chemical reactions [38]. A recent study performed by Chen et al [6] revealed that a single atomic layer of Si can be removed via a mechanochemical method, which was theoretically verified using molecular dynamics simulations.…”

Section: Introductionmentioning

confidence: 99%

“…Attaining single atomic layer removal is the goal that every researcher in this field is aiming at, even though much progress is needed to achieve this reliably. Different methods and perspectives are being approached by the researchers, such as mechanical [34,37,38], mechanochemical [6,39,40], and electrochemical [41,42], to perfectly remove an atomic layer from a substrate.…”

Section: Introductionmentioning

confidence: 99%

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Atomic and Close-to-Atomic Scale Manufacturing: A Review on Atomic Layer Removal Methods Using Atomic Force Microscopy

Mathew

Rodriguez

2020

Nanomanuf Metrol

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Manufacturing at the atomic scale is the next generation of the industrial revolution. Atomic and close-to-atomic scale manufacturing (ACSM) helps to achieve this. Atomic force microscopy (AFM) is a promising method for this purpose since an instrument to machine at this small scale has not yet been developed. As the need for increasing the number of electronic components inside an integrated circuit chip is emerging in the present-day scenario, methods should be adopted to reduce the size of connections inside the chip. This can be achieved using molecules. However, connecting molecules with the electrodes and then to the external world is challenging. Foundations must be laid to make this possible for the future. Atomic layer removal, down to one atom, can be employed for this purpose. Presently, theoretical works are being performed extensively to study the interactions happening at the molecule–electrode junction, and how electronic transport is affected by the functionality and robustness of the system. These theoretical studies can be verified experimentally only if nano electrodes are fabricated. Silicon is widely used in the semiconductor industry to fabricate electronic components. Likewise, carbon-based materials such as highly oriented pyrolytic graphite, gold, and silicon carbide find applications in the electronic device manufacturing sector. Hence, ACSM of these materials should be developed intensively. This paper presents a review on the state-of-the-art research performed on material removal at the atomic scale by electrochemical and mechanical methods of the mentioned materials using AFM and provides a roadmap to achieve effective mass production of these devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Atomic and Close-to-Atomic Scale Manufacturing: A Review on Atomic Layer Removal Methods Using Atomic Force Microscopy

Mathew

Rodriguez

2020

Nanomanuf Metrol

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“…The versatility of AFMs and their unique abilities to investigate sample surfaces in air, vacuum and liquid environments have led to the development of a large number of operating modes, such as contact, semi-contact and non-contact modes [1], [2]. These developments have paved the way for substantial advancement in a variety of fields since the invention of AFM in the 1980's [3], including in biological and life sciences [4]- [6], semiconductor metrology and manufacturing [7]- [9], nanofabrication [10]- [12], and high-density data storage systems [13], [14].…”

Section: Introductionmentioning

confidence: 99%

Collocated Z-Axis Control of a High-Speed Nanopositioner for Video-Rate Atomic Force Microscopy

Yong

Moheimani

2015

IEEE Trans. Nanotechnology

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A key hurdle to achieve video-rate atomic force microscopy (AFM) in constant-force contact mode is the inadequate bandwidth of the vertical feedback control loop. This paper describes techniques used to increase the vertical tracking bandwidth of a nanopositioner to a level that is sufficient for video-rate AFM. These techniques involve the combination of: a high-speed XYZ nanopositioner; a passive damping technique that cancels the inertial forces of the Z actuator which in turns eliminates the low 20-kHz vertical resonant mode of the nanopositioner; an active control technique that is used to augment damping to high vertical resonant modes at 60 kHz and above. The implementation of these techniques allows a tenfold increase in the vertical tracking bandwidth, from 2.3 (without damping) to 28.1 kHz. This allows high-quality, video-rate AFM images to be captured at 10 frames/s without noticeable artifacts associated with vibrations and insufficient vertical tracking bandwidth.

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“…Parallel nanoprobes are used as a way to overcome this constraint, boosting its productivity [11][12][13][14]. Atomic force microscope (AFM), scanning tunneling microscope (STM), and scanning near-field optical microscope (SNOM) are among the apparatus which can be modified and used in SPL techniques [15][16][17][18][19]. Patterning with atomic resolution of about 1Å has been predicted by AFM [1].…”

Section: Introductionmentioning

confidence: 99%

Characterization of Line Nanopatterns on Positive Photoresist Produced by Scanning Near‐Field Optical Microscope

Aghaei

Yasrebi

Rashidian

2015

Journal of Nanomaterials

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Line nanopatterns are produced on the positive photoresist by scanning near-field optical microscope (SNOM). A laser diode with a wavelength of 450 nm and a power of 250 mW as the light source and an aluminum coated nanoprobe with a 70 nm aperture at the tip apex have been employed. A neutral density filter has been used to control the exposure power of the photoresist. It is found that the changes induced by light in the photoresist can be detected byin situshear force microscopy (ShFM), before the development of the photoresist. Scanning electron microscope (SEM) images of the developed photoresist have been used to optimize the scanning speed and the power required for exposure, in order to minimize the final line width. It is shown that nanometric lines with a minimum width of 33 nm can be achieved with a scanning speed of 75 µm/s and a laser power of 113 mW. It is also revealed that the overexposure of the photoresist by continuous wave laser generated heat can be prevented by means of proper photoresist selection. In addition, the effects of multiple exposures of nanopatterns on their width and depth are investigated.

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Silicon Nanofabrication by Atomic Force Microscopy-Based Mechanical Processing

Cited by 23 publications

References 41 publications

Atomic and Close-to-Atomic Scale Manufacturing: A Review on Atomic Layer Removal Methods Using Atomic Force Microscopy

Atomic and Close-to-Atomic Scale Manufacturing: A Review on Atomic Layer Removal Methods Using Atomic Force Microscopy

Collocated Z-Axis Control of a High-Speed Nanopositioner for Video-Rate Atomic Force Microscopy

Characterization of Line Nanopatterns on Positive Photoresist Produced by Scanning Near‐Field Optical Microscope

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