Silicon nanocrystals by thermal annealing of Si-rich silicon oxide prepared by the LPCVD method

Ivanda, Mile; Gebavi, Hrvoje; Ristić, Davor; Furić, Krešimir; Musić, Svetozar; Ristić, Mira; Žonja, Sanja; Biljanović, Petar; Gamulin, Ozren; Balarin, Maja; Montagna, M.; Ferarri, M.; Righini, Giancarlo C.

doi:10.1016/j.molstruc.2006.09.036

Cited by 13 publications

(15 citation statements)

References 6 publications

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“…The details of the LPCVD reactor used are given elsewhere. 3 Six samples were produced labeled S1-S6 representing ammonia flows of 16, 25, 34, 43, 52 and 61 cm 3 min -1 respectively. The Raman spectra were recorded using Horiba Jobin Yvon T6400 Raman spectrometer.…”

Section: Methodsmentioning

confidence: 99%

Low Temperature Deposition of SiNx Thin Films by the LPCVD Method

Tijanic¹,

Ristić²,

Ivanda³

et al. 2012

Croat. Chem. Acta

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Abstract. Thin silicon rich nitride (SiN x ) films were deposited using the LPCVD (Low Pressure Chemical Vapor Deposition) method. Silane diluted in argon and ammonia were used as the reactant gasses, and the low temperature deposition at 570 °C was used. The films were deposited on silicon (111) substrates. Films with the different values of the nitrogen content were deposited by varying the ratio of the flows of ammonia and silane in the horizontal tube reactor. The films were characterized in terms on the surface quality (by scanning electron microscopy), in terms of the nitrogen content x by time of flight elastic recoil detection analysis and by Raman and FTIR spectroscopy. The thickness and dielectric constant were measured by ellipsometry. The films were found to have a very smooth, homogeneous surface with nitrogen content that vary from x = 0 to x = 1 in dependence on the deposition parameters. The intensity of the Si-N stretching peak has shown strong correlation with the film thickness measured by ellipsometry. The films showed a smooth surface layer and the value of dielectric constant easily controllable by the ratio of the flow of the gases in the reactor. (doi: 10.5562/cca1970)

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Section: Methodsmentioning

confidence: 99%

Low Temperature Deposition of SiNx Thin Films by the LPCVD Method

Tijanic¹,

Ristić²,

Ivanda³

et al. 2012

Croat. Chem. Acta

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“…It then becomes a crucial step in the Si NC fabrication process, and it highly depends on the previous deposition. In particular, it can be found that two different annealing temperature regimes affect the properties of NCs in different ways depending on the used deposition method: whereas temperatures around 1050-1100 C are sufficient for films fabricated by means of physical-vapor deposition (PVD) [13][14][15] and lowpressure CVD (LPCVD), 12,16 higher annealing temperatures, in the range of 1200-1250 C, are often reported to induce a good phase separation and crystallization of Si nanoclusters when prepared by plasma-enhanced CVD (PECVD). 12 This different optimum temperature range is associated with the unintentional incorporation of N in the films during the PECVD process, which affects the Si diffusion length.…”

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confidence: 99%

Annealing temperature and barrier thickness effect on the structural and optical properties of silicon nanocrystals/SiO2 superlattices

López-Vidrier

Hernández

Hiller

et al. 2014

Journal of Applied Physics

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The effect of the annealing temperature and the SiO 2 barrier thickness of silicon nanocrystal (NC)/ SiO 2 superlattices (SLs) on their structural and optical properties is investigated. Energy-filtered transmission electron microscopy (TEM) revealed that the SL structure is maintained for annealing temperatures up to 1150 C, with no variation on the nanostructure morphology for different SiO 2 barrier thicknesses. Nevertheless, annealing temperatures as high as 1250 C promote diffusion of Si atoms into the SiO 2 barrier layers, which produces larger Si NCs and the loss of the NC size control expected from the SL approach. Complementary Raman scattering measurements corroborated these results for all the SiO 2 and Si-rich oxynitride layer thicknesses. In addition, we observed an increasing crystalline fraction up to 1250 C, which is related to a decreasing contribution of the suboxide transition layer between Si NCs and the SiO 2 matrix due to the formation of larger NCs. Finally, photoluminescence measurements revealed that the emission of the superlattices exhibits a Gaussian-like lineshape with a maximum intensity after annealing at 1150 C, indicating a high crystalline degree in good agreement with Raman results. Samples submitted to higher annealing temperatures display a progressive emission broadening, together with an increase in the central emission wavelength. Both effects are related to a progressive broadening of the size distribution with a larger mean size, in agreement with TEM observations. On the other hand, whereas the morphology of the Si NCs is unaffected by the SiO 2 barrier thickness, the emission properties are slightly modified. These observed modifications in the emission lineshape allow monitoring the precipitation process of Si NCs in a direct non-destructive way. All these experimental results evidence that an annealing temperature of 1150 C and 1-nm SiO 2 barrier can be reached whilst preserving the SL structure, being thus the optimal structural SL parameters for their use in optoelectronics. V C 2014 AIP Publishing LLC. [http://dx.

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“…Therefore, there remain sufficient Si suboxides even after annealing at 1000 o C for 300s. These Si suboxides may form a transition layer between the Si nanoparticles and the oxide matrix, which have been confirmed by several other researchers [6,11,20].…”

Section: Chemical Structure Evolutionsupporting

confidence: 74%

“…The diffusion-controlled growth mechanism of the nc-Si was detailed by Nesbit based on TEM studies of the diffusion behaviors of SiOx films synthesized by CVD under various annealing temperature [20]. By assuming a spherical silicon cluster radius r, the silicon cluster growth rate in the SiOx matrix at a given annealing temperature T A can be expressed as…”

Section: Diffusion-controlled Growth Mechanismmentioning

confidence: 99%

“…After reset switching, the conducting filaments could be ruptured by Joule heating effect, and the devices turn back to the HRS. Besides, other models included Schottky barrier model [20] and trap-controlled space-charge-limited current (SCLC) [21] are also proposed to interpret the bipolar switching effect. Recently, a resistive switching behavior in the Si-rich oxide (SiOx) films synthesized by e-gun evaporation has been observed by Tsai et al [22].…”

Section: Resistive Switching Effect In the Nanocomposite Filmsmentioning

confidence: 99%

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Magnetron sputtered nanocomposite films of SI nanocrystals embedded in SIO2 for electronic and optoelectronic applications.

Zhang¹

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Silicon nanocrystals by thermal annealing of Si-rich silicon oxide prepared by the LPCVD method

Cited by 13 publications

References 6 publications

Low Temperature Deposition of SiNx Thin Films by the LPCVD Method

Low Temperature Deposition of SiNx Thin Films by the LPCVD Method

Annealing temperature and barrier thickness effect on the structural and optical properties of silicon nanocrystals/SiO2 superlattices

Magnetron sputtered nanocomposite films of SI nanocrystals embedded in SIO2 for electronic and optoelectronic applications.

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