Silicon interposer with integrated antenna array for millimeter-wave short-range communications

Dussopt, Laurent; Lamy, Yann; Joblot, S.; Lanteri, Jérôme; Salti, Hassan; Bar, P.; Sibuet, H.; Reig, B.; Carpentier, J.F.; Dehos, Cédric; Vincent, Pierre

doi:10.1109/mwsym.2012.6259424

Cited by 26 publications

(16 citation statements)

References 5 publications

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“…The previously reported performances in [11] showed a gain of up to 4-7.9 dBi in the broadside direction for a single antenna element and a reflection coefficient below 214 dB across the 57-66 GHz band. Note that the array could be more compact if it was realized on a single chip with an inter-element spacing of 2.5 mm as in [11]. The array is composed of five individual antenna chips (5 × 15 mm 2 ) assembled side-by-side with a center-to-center distance of 3 mm (0.6 wavelength at 60 GHz).…”

Section: A) Focal Source Arraymentioning

confidence: 78%

“…In this work, the design of the transmit-array unit-cell previously presented in [8] has been updated in order to provide a 3-bit phase quantization (as compared to 2 bits in [8]) and the transmit-array was optimized for a focal array composed of five identical integrated antennas previously developed in [11]. The complete simulated and measured performances are presented and compared, showing a very good agreement.…”

Section: Introductionmentioning

confidence: 99%

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A V-band switched-beam transmit-array antenna

Luna

Dussopt

2014

Int. j. microw. wirel. technol.

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A high-directivity switched-beam antenna in the V-band is presented and includes a circularly-polarized transmit-array realized in a low-cost printed technology associated with a focal source array integrated on high-resistivity silicon. The measurements show a maximum gain of 12.1 dBi, a 3-dB gain-bandwidth of 57.8-70 GHz, and an axial ratio below 5 dB. The antenna exhibits five beams pointing from 2228 to +238 in one plane, its size of 25 × 25 × 10 mm 3 is compatible with the integration in different multimedia communication devices.

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Section: A) Focal Source Arraymentioning

confidence: 78%

Section: Introductionmentioning

confidence: 99%

A V-band switched-beam transmit-array antenna

Luna

Dussopt

2014

Int. j. microw. wirel. technol.

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“…The integrated passive device (IPD) technology based on TSVs provides a promising option to realize a compact mmW and THz system with excellent RF performance improve system reliability and reduce passive assembly complexity. Thin film IPD technology, such as resistors, capacitors, inductors in the common substrate, provides a wide range of passive component values with higher density and lower process tolerance …”

Section: The Mmw Devices Based On Tsv Technologiesmentioning

confidence: 99%

Electrical models of through silicon Vias and silicon‐based devices for millimeter‐wave application

Liu

Zhu

Yang

et al. 2018

Int J RF Microw Comput Aided Eng

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As the short vertical interconnections can significantly shorten the interconnect length between different circuits, three‐dimensional integrated circuits (3D ICs) based on the through‐silicon via (TSV) technology are considered as one of the most promising alternatives to overcome the scaling limits of Moore's low. Moreover, as the silicon technologies have been progressively expanded into the millimeter‐wave (mmW) realm, the TSV technology also provides a promising option to realize a compact system with high performance and operating frequencies. This article provides an overview of recent advances in the development of TSV technologies and silicon‐based passive devices for mmW applications. As various kinds of TSV losses are detrimental to the electrical performance of 3D ICs, especially in mmW systems, TSVs exploiting novel structures and materials still needs much more research, making it possible to integrate the passive device on 3D ICs and providing a promising option to realize a compact mmW system with excellent electrical performance and system reliability.

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“…Using TSVs, the front-end electronics of the system can be fabricated on low-resistivity CMOS dies and the antenna fabricated on a separate die with higher resistivity such as in [4] and [5]. The die are then stacked, and TSVs are used to create the connection between the antenna die (stacked onto the nonactive side of the CMOS die) and the active side of the CMOS die using a via-last approach.…”

Section: Introductionmentioning

confidence: 99%

“…The die are then stacked, and TSVs are used to create the connection between the antenna die (stacked onto the nonactive side of the CMOS die) and the active side of the CMOS die using a via-last approach. This solution eliminates the high signal loss associated with the low-resistivity silicon allowing antenna gains of up to 5 dBi [5]; however, via creation requires additional processing, such as fabrication of a redistribution layer (RDL) onto the backside of the IC, increasing the back-end-of-line (BEOL) system cost. Additionally, the loss of TSVs has been characterized and found to have values of approaching 3.5 dB at 20 GHz [6] and 4.96 dB at 10 GHz [7] (results consider the whole system consisting of the via, solder-bump, and RDL).…”

Section: Introductionmentioning

confidence: 99%

Coupled Loops for High-Frequency Chip-to-Antenna Interconnection at 24 GHz

Johnstone

Frank

Antar

2014

IEEE Trans. Microwave Theory Techn.

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This paper examines the use of two coupled loops as an alternative method of connection for high-frequency signals between passive elements on microwave laminates and integrated circuits (ICs) replacing traditional interconnect methods such as wire bonds and solder bumps, which require costly post back-end-of-line processing. The loops harness both electric and magnetic fields in order to create the interconnection. Additionally, they can be placed around the perimeter of the IC where they would not occupy space that may be required for other components such as spiral inductors. In order to test the chip-to-antenna system, the interconnect was fabricated with one metallic loop on a low-loss microwave laminate and another on a 0.13m CMOS IC. These loops were then stacked in order to couple the signal from an IC onto a planar antenna array (printed on the laminate). This antenna-to-chip system was measured to have a center frequency near 23 GHz, with fractional bandwidth of 15%, and a peak antenna gain over 5 dBi; the transmission loss in the loop coupling is estimated to be 0.5 dB at 19 GHz (89% power transfer). The radiation pattern from the antenna (a four-element uniform array of bow-tie dipoles) has a 3-dB beamwidth of 16 in the elevation plane and 90 in the azimuth plane, making it potentially useful for application in mass-produced automotive radar systems, where harsh conditions create demand for a more robust interconnect method than wire bonding.

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Silicon interposer with integrated antenna array for millimeter-wave short-range communications

Cited by 26 publications

References 5 publications

A V-band switched-beam transmit-array antenna

A V-band switched-beam transmit-array antenna

Electrical models of through silicon Vias and silicon‐based devices for millimeter‐wave application

Coupled Loops for High-Frequency Chip-to-Antenna Interconnection at 24 GHz

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