2013
DOI: 10.1016/j.egypro.2013.07.316
|View full text |Cite
|
Sign up to set email alerts
|

Silicon Ingot Quality and Resulting Solar Cell Performance

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2017
2017
2019
2019

Publication Types

Select...
4
1

Relationship

0
5

Authors

Journals

citations
Cited by 6 publications
(2 citation statements)
references
References 6 publications
0
2
0
Order By: Relevance
“…e morphology of CdSe QDs and their PL intensity is generally utilized to confirm the reducing ligands effect, which we have discussed elsewhere [20]. In this work, the effect of the reduced ligand can be dominantly observed from its J SC and resistant values [21,22]. e removed ligand leads to the higher conductivity of QDs, which contributed to the increased J SC overall.…”
Section: Resultsmentioning
confidence: 78%
“…e morphology of CdSe QDs and their PL intensity is generally utilized to confirm the reducing ligands effect, which we have discussed elsewhere [20]. In this work, the effect of the reduced ligand can be dominantly observed from its J SC and resistant values [21,22]. e removed ligand leads to the higher conductivity of QDs, which contributed to the increased J SC overall.…”
Section: Resultsmentioning
confidence: 78%
“…However, the electron activity of some impurities may be dependent on their chemical configuration or their physical distribution in the crystal (complexed with other impurities, dissolved or agglomerated). These effects can be investigated by the electronic properties of crystallized silicon and are therefore used as another measure of the quality of the raw material [107]. Structural and electronic quality can be measured by optical inspection, lifetime, traps density and photoluminescence.…”
Section: Characterization Techniques For C-si Ingots and Wafersmentioning
confidence: 99%