2022
DOI: 10.1109/jstqe.2021.3112494
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Silicon-Germanium Avalanche Receivers With fJ/bit Energy Consumption

Abstract: Fast, low-noise and sensitive avalanche photoreceivers are needed for surging short-reach photonic applications. Limitations concerning bandwidth, throughput and energy consumption should be overcome. In this work, we comprehensively study the performance opportunities provided by avalanche p-i-n photodetectors with lateral silicongermanium-silicon heterojunctions. Our aim is to circumvent the need for chip-bonded electronic amplifiers. In particular, we demonstrate that avalanche photodetectors based on silic… Show more

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Cited by 19 publications
(10 citation statements)
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References 52 publications
(121 reference statements)
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“…SACM APDs can realize high GBP and low excess noise but require accurate control of the doping profile in SACM structure, including layer thicknesses (or silicon charge and multiplication widths for lateral SACM APDs) and doping levels. By contrast, lateral pi-n APDs with double heterojunctions are an alternative for APD design [79,80,116]. Zhang et al proposed an APD with a lateral p-i-n junction, as shown in Fig.…”
Section: P-i-n Apdmentioning
confidence: 99%
See 2 more Smart Citations
“…SACM APDs can realize high GBP and low excess noise but require accurate control of the doping profile in SACM structure, including layer thicknesses (or silicon charge and multiplication widths for lateral SACM APDs) and doping levels. By contrast, lateral pi-n APDs with double heterojunctions are an alternative for APD design [79,80,116]. Zhang et al proposed an APD with a lateral p-i-n junction, as shown in Fig.…”
Section: P-i-n Apdmentioning
confidence: 99%
“…The study [79]; c Schematic cross section of the waveguide-coupled Si-Ge p-i-n APD. Insets are cross-sectional views of the p-i-n device and the injection waveguide [80]; d Schematic of the p-i-n APD with lateral p-i-n heterojunctions, optical mode profiles of p-i-n APDs with various germanium widths, and light propagation through p-i-n APDs with various germanium lengths [116] of the APD multiplication gain versus the bias voltage under different input powers indicates that the multiplication gain increases with the decrease of the input optical power. The phenomenon also occurs in other types of APDs.…”
Section: P-i-n Apdmentioning
confidence: 99%
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“…In our case, we are working on the thermal noise dominated regime (low incident optical power) so there is a benefit in using APD. High-speed and low noise APD have been reported in silicon foundry compatible systems [61]. Another alternative is the use of non-invasive detectors [62] which will eliminate the necessity to take a portion of the incoming light to trigger the self-made modulation.…”
Section: Appendix B Scalabilitymentioning
confidence: 99%
“…Near-infrared photodetectors have been widely used in fiber communication [ 1 , 2 , 3 , 4 , 5 ], spectroscopy [ 6 , 7 ], and light detection and ranging (LIDAR) [ 8 , 9 ]. High-speed and high-sensitivity photodetectors are desirable to relax the power budget and improve the energy efficiency of fiber communication.…”
Section: Introductionmentioning
confidence: 99%