Silicon-germanium and platinum silicide nanostructures for silicon based photonics

Storozhevykh, Mikhail S.; Dubkov, V. P.; Arapkina, Larisa V.; Чиж, К. В.; Mironov, S.; Chapnin, V. A.; Yuryev, Vladimir A.

doi:10.1117/12.2265882

Cited by 9 publications

(9 citation statements)

References 39 publications

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“…Finally, only polycrystalline Si layers form at the higher temperatures (for details, see Ref. [23]). [29,30,31].…”

Section: Results and Their Interpretationmentioning

confidence: 99%

“…Both in-situ structural investigations of the surface of the growing Si layer using RHEED and ex-situ examinations of the deposited Si layer using high resolution trans-mission electron microscopy have shown that an amorphous silicon layer forms on Type N substrates at the temperature range from 30 to 420°C [23,28]. Transition from the amorphous structure of the growing film to the polycrystalline one after the film thickness reaches a critical value-i.e.…”

Section: Results and Their Interpretationmentioning

confidence: 99%

“…At first, they were washed in the ammonia-peroxide solution and dried in the isopropyl alcohol vapor (for 10 min) and the clean air. Additionally, before moving into the MBE chamber, the substrates were annealed at 600°C at the residual gas pressure of less than 5 × 10 −9 Torr in the preliminary annealing chamber for 6 hours [1,2,23,27].…”

Section: Samplesmentioning

confidence: 99%

“…This process was performed in three consecutive steps: at first, the wafers were treated in dry oxygen for 30 min, then in wet oxygen for 60 min, and finally, in dry oxygen for 30 min. A 175 nm thick Si 3 N 4 layer was deposited on both sides of the oxidized wafers by pyrolysis of a monosilane-ammonia mixture at the temperature of 750 °C for 60 min [1,2,23].…”

Section: Samplesmentioning

confidence: 99%

“…At first, they were washed in the ammonia-peroxide solution (NH 4 OH (27%) : H 2 O 2 (30%) : H 2 O [1 : 1 : 3], boiling for 10 min), then rinsed in deionized water, boiled in high-purity isopropyl alcohol ([C 3 H 7 OH] > 99.8 wt%, T ≈ 70°C), and dried in the isopropyl alcohol vapor (for 10 min) and the clean air. Additionally, before moving into the MBE chamber, the substrates were annealed at 600°C at the residual gas pressure of less than 5 × 10 −9 Torr in the preliminary annealing chamber for 6 hours [1,2,23,27].…”

Section: Samplesmentioning

confidence: 99%

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Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates

Чиж

Arapkina

Stavrovsky

et al. 2019

Materials Science in Semiconductor Processing

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In the paper, the processes occurring during low-temperature growth of non-hydrogenated amorphous Si and polycrystalline Si films on multilayer Si 3 N 4 /SiO 2 /c-Si substrates from molecular beams under conditions of ultrahigh vacuum are studied in detail. Diffusion of hydrogen atoms from a dielectric layer into the growing film is shown to accompany the growth of a silicon film on a Si 3 N 4 layer deposited by CVD or on a SiO 2 layer obtained by thermal oxidation of a silicon wafer. The process of hydrogen migration from the dielectric substrates into the silicon film is studied using FTIR spectroscopy. The reduction of IR absorption at the bands related to the N-H bonds vibrations and the increase of IR absorption at the bands relating to the Si-N bonds vibrations in IR spectra demonstrate that hydrogen atoms leave Si 3 N 4 layer during Si deposition from a molecular beam. The absorption band assigned to the valence vibrations of the Si-H bond at ∼ 2100 cm −1 emerging in IR spectra obtained at samples deposited both on Si 3 N 4 and SiO 2 layers indicates the accumulation of hydrogen atoms in silicon films. The difference in chemical potentials of hydrogen atoms in the dielectric layer and the silicon film explains the transfer of hydrogen atoms from the Si 3 N 4 or SiO 2 layer into the growing silicon film.

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“…Finally, only polycrystalline Si layers form at the higher temperatures (for details, see Ref. [23]). [29,30,31].…”

Section: Results and Their Interpretationmentioning

confidence: 99%

Section: Results and Their Interpretationmentioning

confidence: 99%