Silicon fusion bonding and deep reactive ion etching: a new technology for microstructures

Klaassen, E.H.; Petersen, K.; Noworolski, J.M.; Logan, J.; Maluf, N.I.; Brown, Joe; Storment, C.W.; McCulley, W.; Kovacs, G.T.A.

doi:10.1016/0924-4247(96)80138-5

Cited by 159 publications

(81 citation statements)

References 11 publications

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“…Some recently reported applications are already exploiting this last alternative [1], [5], [6]. Furthermore, by suppressing the time multiplexing, the equipment can be run with continuous flows of SF or C F .…”

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confidence: 99%

“…EEP reactive ion etching (DRIE) of silicon enables the microfabrication of high-aspect ratio structures (HARS), which, in turn, permit the fabrication of devices able to span from 100 to 1000 m. HARS also allow the fabrication of structures that are compliant in the plane of the wafer but rigid in the direction normal to its surface [1]. Furthermore, HARS in combination with aligned silicon wafer bonding, make possible the realization of novel and promising applications, such as Power MEMS [2].…”

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Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE)

Chen

Ayón

Zhang

et al. 2002

J. Microelectromech. Syst.

209

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Abstract-The ability to predict and control the influence of process parameters during silicon etching is vital for the success of most MEMS devices. In the case of deep reactive ion etching (DRIE) of silicon substrates, experimental results indicate that etch performance as well as surface morphology and post-etch mechanical behavior have a strong dependence on processing parameters. In order to understand the influence of these parameters, a set of experiments was designed and performed to fully characterize the sensitivity of surface morphology and mechanical behavior of silicon samples produced with different DRIE operating conditions. The designed experiment involved a matrix of 55 silicon wafers with radiused hub flexure (RHF) specimens which were etched 10 min under varying DRIE processing conditions. Data collected by interferometry, atomic force microscopy (AFM), profilometry, and scanning electron microscopy (SEM), was used to determine the response of etching performance to operating conditions. The data collected for fracture strength was analyzed and modeled by finite element computation. The data was then fitted to response surfaces to model the dependence of response variables on dry processing conditions. The results showed that the achievable anisotropy, etching uniformity, fillet radii, and surface roughness had a strong dependence on chamber pressure, applied coil and electrode power, and reactant gases flow rate. The observed post-etching mechanical behavior for specimens with high surface roughness always indicated low fracture strength. For specimens with better surface quality, there was a wider distribution in sample strength. This suggests that there are more controlling factors influencing the mechanical behavior of specimens. Nevertheless, it showed that in order to achieve high strength, fine surface quality is a necessary requisite. The mapping of the dependence of response variables on dry processing conditions produced by this systematic approach provides additional insight into the plasma phenomena involved and supplies a practical set of tools to locate and optimize robust operating conditions.[684]Index Terms-Deep reactive ion etching (DRIE), fracture strength, MEMS, plasma etching, silicon, surface morphology.

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confidence: 99%

Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE)

Chen

Ayón

Zhang

et al. 2002

J. Microelectromech. Syst.

209

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“…This approach simplifies assembly, avoids the need for bonding and reduces the likelihood of detachment. The slots and springs are formed in BSOI substrates [29], [30], using deep-reactive ion etching (DRIE) methods that are now highly developed for MEMS [31]. The precision of the structure is therefore determined by lithography and deep etching, and by the original definition of the bonded silicon layer.…”

Section: Monolithic Mems Quadrupole Mass Spectrometersmentioning

confidence: 99%

Monolithic MEMS quadrupole mass spectrometers by deep silicon etching

Geear¹,

Syms

Wright³

et al. 2005

J. Microelectromech. Syst.

105

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“…Micro-masonry provides several attractive features not present in other methods: (a) the ability to integrate functional and structural solid inks of dissimilar materials to assemble MEMS sensors and actuators all integrated within the 3D structure; (b) the interfaces of assembled solid inks can function as electrical and thermal contacts 9,10 ; (c) the assembly spatial resolution can be high (~1 μm) by utilizing highly-scalable and wellunderstood lithographic processes for generating solid inks and highly-precise mechanical stages for transfer printing 7 ; and (d) functional and structural solid inks can be integrated on both rigid and flexible substrates in planar or curvilinear geometries.…”

Section: Introductionmentioning

confidence: 99%

Micro-masonry for 3D Additive Micromanufacturing

Keum

Kim

2014

JoVE

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Transfer printing is a method to transfer solid micro/nanoscale materials (herein called 'inks') from a substrate where they are generated to a different substrate by utilizing elastomeric stamps. Transfer printing enables the integration of heterogeneous materials to fabricate unexampled structures or functional systems that are found in recent advanced devices such as flexible and stretchable solar cells and LED arrays. While transfer printing exhibits unique features in material assembly capability, the use of adhesive layers or the surface modification such as deposition of self-assembled monolayer (SAM) on substrates for enhancing printing processes hinders its wide adaptation in microassembly of microelectromechanical system (MEMS) structures and devices. To overcome this shortcoming, we developed an advanced mode of transfer printing which deterministically assembles individual microscale objects solely through controlling surface contact area without any surface alteration. The absence of an adhesive layer or other modification and the subsequent material bonding processes ensure not only mechanical bonding, but also thermal and electrical connection between assembled materials, which further opens various applications in adaptation in building unusual MEMS devices. Video LinkThe video component of this article can be found at

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Silicon fusion bonding and deep reactive ion etching: a new technology for microstructures

Cited by 159 publications

References 11 publications

Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE)

Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE)

Monolithic MEMS quadrupole mass spectrometers by deep silicon etching

Micro-masonry for 3D Additive Micromanufacturing

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