Silicon for photovoltaic applications

Müller, Alexandra; Ghosh, Manoranjan; Sonnenschein, Róbert; Woditsch, Peter

doi:10.1016/j.mseb.2006.06.054

Cited by 149 publications

(71 citation statements)

References 2 publications

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“…Hierarchical binning, although timeconsuming, allows improving the contrast and the identification of many details [7]. Finally, the application of sophisticated computer vision tools is very helpful to make visible the morphology of features such as fatigue cracks in dental ceramics without staining [8].…”

Section: Abstract: Synchrotron Radiation Tomography Tissuementioning

confidence: 99%

Absorption-contrast synchrotron-radiation-based micro computed tomography in medicine, biology, and materials science

Müller¹

2006

Acta Cryst Sect A

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Keywords: 3D-image analysis, porous materials, characterizationIn materials' science, as well as in other research fields, the Euler number (or its density) is used as a characteristic describing the connectivity of the components (constituents) of a composite material or the pore space of a porous medium, see [1]. From a theoretical point of view the Euler number of a 3-dimensional set X in the Euclidean space is a basic quantity of integral geometry. By means of Crofton's intersection formulae, the intrinsic volumes (e.g. the surface area, the total length of curved fibres, the mean breadth of a particle, the integral of Germain's curvature) can be expressed in terms of the Euler numbers of intersections of X with lines and planes, respectively. This is the basis of the measurement of the quantities in 3d-image analysis. The observation of a set X on a homogeneous point lattice implies a discretization of the Crofton's formulas. This leads to an efficient expression of the intrinsic volumes as a scalar product of two vectors. The fist vector depends on the image. Its components (the frequencies of pixel configurations) can easily be measured by a marching cube method. The second vector is independent of the image. Its components depends on the lattice spacings (lateral resolution), the adjacency system assumed for the pixels and the quadrature rule applied in the numerical computation of the integrals occuring in Crofton's formulas [2,3]. The approach basing on Crofton's intersection formulas has clear advantages over other methods where the weights are determined more or less empirically. It leads to higher accuracy of measurement, it can be applied to a wide range of features and it supplies multigrid convergence under weak conditions for the discretization of the set X. The applicability of the method is demonstrated for a wide range of materials, e.g. open foams, fleeces and autoclaved aerated concrete.

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Section: Abstract: Synchrotron Radiation Tomography Tissuementioning

confidence: 99%

Absorption-contrast synchrotron-radiation-based micro computed tomography in medicine, biology, and materials science

Müller¹

2006

Acta Cryst Sect A

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“…Therefore, a new type of silicon known as solar-grade silicon (SoG-Si) was introduced, for which the target price is $10 to 15 kg À1 . [2,3] The current price is about $18 kg À1 , [4] down from over $200 kg À1 in 2008. The existing method for production of solar grade Si (SoG-Si) necessitates a two-step process: producing metallurgical-grade Si (MG-Si) by carbothermal reduction of SiO 2 , [5] followed by the CVD-based purification method (Siemens).…”

mentioning

confidence: 99%

“…The standard decomposition potential of SiO 2 has been calculated from the Nernst's equation as À1.75 V at 1313 K (1040°C). [3,10,11] In most of the researches, graphite has been used as the anode due to its resistance to the corrosive environment of molten salts. Graphite reacts with the evolved O 2 and results in the release of CO and CO 2 on the anode surface.…”

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confidence: 99%

Determination of Cell Potential for Silicon Electrodeposition

Sokhanvaran

Danaei

Barati

2014

Metallurgical and Materials Transactions E

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Electrowinning of Si from cryolite-based melts is a possible solution for mass production of high purity silicon. The required cell potential to deposit Si on a cathode of interest, copper, is fundamental information that needs to be measured for controlling the co-deposition of impurities. In this study, the potential was measured using cyclic voltammetry in a cryolite-6 pct SiO 2 melt. The deposited Si on copper forms a Cu-Si alloy in which the activity of Si affects the decomposition potential. The measurements were carried out in a range of Si concentrations, allowing the prediction of potential change during the actual deposition process, where the Si content changes constantly. The results were compared with the values obtained from cyclic voltammetry on an inert electrode, graphite, to investigate if the formation of Cu-Si alloy is responsible for decreasing the potential.

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“…UMG-Si materials offer the advantage of a simple manufacturing process and low production cost for the photovoltaic industry [1][2][3]. At present, UMG-Si materials are commercially produced with a purity of 99.999% (5N), a production cost of less than 20 US$/kg and a conversion efficiency of more than 13.3%.…”

mentioning

confidence: 99%

Effects of high temperature annealing on the dislocation density and electrical properties of upgraded metallurgical grade multicrystalline silicon

Hong

Shen

2011

Chin. Sci. Bull.

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High temperature annealing was performed on upgraded metallurgical grade multicrystalline silicon (UMG multi-Si) wafers with a purity of 99.999%. The samples were mechanically polished and chemically etched, and then the microstructures were observed by a scanning electron microscope (SEM). The minority carrier lifetime and resistivity of the samples were measured using microwave photoconductance decay and four-point probe techniques, respectively. The results show that the electrical properties of the samples decrease rather than increase as the annealing temperature increases, while the number of dislocations in bulk Si reduced or even disappeared after annealing for 6 hours at 1100-1400°C. It is considered that the structural microdefects induced by the high concentration of metal impurities (including interstitial or substitutional impurities and nanoscale precipitates) determine the minority carrier recombination activity and thus the electrical properties of UMG multi-Si wafers rather than dislocations in bulk Si.upgraded metallurgical grade multicrystalline silicon, high temperature annealing, dislocation density, minority carrier lifetime Citation:Xu H B, Hong R J, Shen H. Effects of high temperature annealing on the dislocation density and electrical properties of upgraded metallurgical grade multicrystalline silicon.

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Silicon for photovoltaic applications

Cited by 149 publications

References 2 publications

Absorption-contrast synchrotron-radiation-based micro computed tomography in medicine, biology, and materials science

Absorption-contrast synchrotron-radiation-based micro computed tomography in medicine, biology, and materials science

Determination of Cell Potential for Silicon Electrodeposition

Effects of high temperature annealing on the dislocation density and electrical properties of upgraded metallurgical grade multicrystalline silicon

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