Silicon film deposition on crystalline, sintered and powder substrates using an inline optical processing CVD system

Abstract

An inline optical CVD process operating at low temperature (<873 K) and at atmospheric pressure is presented here to grow silicon films on top of crystalline, sintered silicon and pressed silicon powder substrates moving at constant speed (>10 mm/min) inside the furnace. Solid silicon substrates were laser textured to reduce the reflectivity, leveraging the growth rates. Laser patterning has a strong influence in the growth rate, reaching values up to 9 µm/min. Using pressed silicon powder substrates, growth rates increase dramatically to 40‐90 µm/min. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Silicon on Dust Substrate: The Effect of Powder Size on Ribbon Production

“…The diffusion and deposition of the silicon atoms resulting from silane pyrolysis is enhanced by larger effective area in lower grain size powders, thus increasing the process GR. Such results agree with previous studies with CVD over laser textured solid silicon substrates that evidenced an increase of GR with the intensity of the laser texturing pattern (higher surface disorder).…”