Frontiers in Electronics 2006
DOI: 10.1142/9789812773081_0046
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Silicon Fibre Technology Development for Wearable and Ambient Electronics Applications

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Cited by 2 publications
(2 citation statements)
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“…The experimentally measured diffusion coefficient of 0.9 × 10 Figure 7. This variation has already been reported for moisture desorption in polyimides that suffered the use of SF 6 during O 2 plasma etching [17], as is the case for our dielectric layer during the silicon underetching step [10]. The measured diffusion coefficient is significantly greater than the measured absorption coefficient.…”
Section: Humidity Sensorsupporting
confidence: 70%
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“…The experimentally measured diffusion coefficient of 0.9 × 10 Figure 7. This variation has already been reported for moisture desorption in polyimides that suffered the use of SF 6 during O 2 plasma etching [17], as is the case for our dielectric layer during the silicon underetching step [10]. The measured diffusion coefficient is significantly greater than the measured absorption coefficient.…”
Section: Humidity Sensorsupporting
confidence: 70%
“…This patterned stack then acts as a hard mask for a subsequent isotropic etch of the bulk silicon [10], as presented in Figure 3. The vertical etch depth is approximately 160 µm.…”
Section: Silicon Underetchingmentioning
confidence: 99%