Silicon etch process options for micro- and nanotechnology using inductively coupled plasmas

Welch, Colin; Goodyear, Andy; Wahlbrink, T.; Lemme, Max C.; Mollenhauer, T.

doi:10.1016/j.mee.2006.01.079

Cited by 47 publications

(33 citation statements)

References 4 publications

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“…The chosen power is much lower than what is reported in the literature for similar systems. In comparison, Welch et al [2] report powers in the range 600 − 1200 W 1 and Hung et al [1] of 800 W. According to Henry [13], increasing the power in this regime reduces the etch rate of silicon, while Hung et al [1] report that the etch rate is relatively insensitive to the coil power. These two statements are in disagreement with our experimental results, which show that increasing the coil power increases the etch rate.…”

Section: Effect Of the Icp Parameters On The Etch Rates And Selectivimentioning

confidence: 99%

“…It is important to note that SF 6 ratios of 20 to 40 % are needed to obtain significant anisotropy. The optimal values reported in the literature [1,2] depend on the ICP parameters. Our results using a variety of ratios are presented in the following section and in the online supplementary material Figure S-8.…”

Section: Effect Of the Icp Parameters On The Etch Rates And Selectivimentioning

confidence: 99%

“…The authors in references [1,2] report that SF 6 ratios of 30 − 35 % produce vertical sidewalls and that the optimal value for verticality is pressure-dependent. Although in our work such values also produced near-vertical sidewalls when using type B samples, lower 26 − 28 % values were needed for type A samples because of the oxide layer, as shown in Figure 6b.…”

Section: Anisotropy and Surface Effectsmentioning

confidence: 99%

“…The next-generation devices will use a variety of new materials and geometries, together with stringent scaling requirements. A large effort has been put in the development of plasma etching of nanostructures using a variety of gases and masks [1][2][3]. Nevertheless, there is still a need to address the specific problem of etching silicon nanostructures over nanotopography.…”

Section: Introductionmentioning

confidence: 99%

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Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Harvey-Collard

Jaouad

Drouin

et al. 2013

Microelectronic Engineering

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Inductively Coupled Plasma (ICP) etching of amorphous silicon (a-Si) nanostructures using a continuous C4F8/SF6 plasma over nanotopography in silicon dioxide (SiO2) is investigated. The coil power of the ICP system is used to tune the a-Si etch rate from 20 to 125 nm/min. The etch rates of a-Si, SiO2 and electroresist are measured depending on the SF6 ratio, platen power and chamber pressure and used to optimize the a-Si:SiO2 etch selectivity. The results on nanostructures show that the presence of an insulating etch-stop layer affects the passivation ratio required to achieve vertical sidewalls. A low pressure is also necessary in order to etch the silicon nanostructure embedded into the oxide nanotrenches to form a highly conformable a-Si nanowire. We argue that both of these behaviors could be explained by surface charging effects. Finally, etching of 20 nm a-Si nanowires that cross 15 nm trenches in oxide with vertical sidewalls and a 4.3:1 a-Si:SiO2 etch selectivity is demonstrated. This etching process can be used in applications where nanotopography is present such as single electron transistors or multigate transistors.

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Section: Effect Of the Icp Parameters On The Etch Rates And Selectivimentioning

confidence: 99%

Section: Effect Of the Icp Parameters On The Etch Rates And Selectivimentioning

confidence: 99%

Section: Anisotropy and Surface Effectsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Harvey-Collard

Jaouad

Drouin

et al. 2013

Microelectronic Engineering

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“…Recently, processes consisting of electron beam lithography (EBL) followed by wet and dry silicon etching have stimulated a significant amount of research [3][4][5]. In the work discussed here, a simple technique comprising EBL and an optimized chlorine-based inductively coupled plasma (ICP) etch process was developed, which meets the requirement of fabricating the microscale and nanoscale silicon waveguide devices with anisotropic profile and smooth sidewall morphology without any post etch process.…”

Section: Introductionmentioning

confidence: 99%

Simple technique to fabricate microscale and nanoscale silicon waveguide devices

Yao

Feng

Zhou

et al. 2009

Front. Optoelectron. China

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Fabrication of microscale and nanoscale silicon waveguide devices requires patterning silicon, but until recently, exploitation of the technology has been restricted by the difficulty of forming ever-small features with minimum linewidth fluctuation. A technique was developed for fabricating such devices achieving vertical sidewall profile, smooth sidewall roughness of less than 10 nm, and fine features of 40 nm. Subsequently, silicon microring resonator and silicon-grating coupler were realized using this technique.

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Micro‐/Nanopillars for Micro‐ and Nanotechnologies Using Inductively Coupled Plasmas

Herth

Edmond

Bouville

et al. 2019

Physica Status Solidi (a)

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Herein, the plasma etching mask transfer of the resistance of e‐beam resists, both negative and positive, as well as nanoparticle masks and hard masks are investigated. Various microscale and nanoscale features are exposed under plasma etching chemistries and are examined through both Bosch and pseudo‐Bosch processes using an inductive‐coupled plasma‐deep reactive ion etching (ICP‐DRIE) system. The selection of masks transfer proposed in this work provides better flexibility and cost‐effective processing. The etch profile depending on plasma etching process and feature size is studied and highlighted. In particular, nanopillars are etched to a length of 10 μm and a diameter of 280 nm with a good aspect ratio (>30) yielding a selectivity of better than 100:1 and a satisfactory vertical profile.

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Silicon etch process options for micro- and nanotechnology using inductively coupled plasmas

Cited by 47 publications

References 4 publications

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Simple technique to fabricate microscale and nanoscale silicon waveguide devices

Micro‐/Nanopillars for Micro‐ and Nanotechnologies Using Inductively Coupled Plasmas

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