1993
DOI: 10.1016/0040-6090(93)90009-e
|View full text |Cite
|
Sign up to set email alerts
|

Silicon dioxide thin films prepared by photochemical vapor deposition from silicon tetraacetate

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
5

Citation Types

0
5
0

Year Published

1994
1994
2022
2022

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 17 publications
(6 citation statements)
references
References 3 publications
0
5
0
Order By: Relevance
“…These Si–OH layers react with (tridecafluoroctyl)triethoxysilane molecules. In comparison with other surface modification methods, such as chemical vapor deposition and plasma systems, UVO utilizes relatively inexpensive equipment. Successful fabrication of the SAM-modified membranes was confirmed by attenuated total reflection Fourier transform infrared (FTIR) spectroscopy, energy-dispersive X-ray (EDX) spectrometry, and CA measurements. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were also conducted to further understand the microtopographical changes on the membrane surfaces.…”
Section: Introductionmentioning
confidence: 99%
“…These Si–OH layers react with (tridecafluoroctyl)triethoxysilane molecules. In comparison with other surface modification methods, such as chemical vapor deposition and plasma systems, UVO utilizes relatively inexpensive equipment. Successful fabrication of the SAM-modified membranes was confirmed by attenuated total reflection Fourier transform infrared (FTIR) spectroscopy, energy-dispersive X-ray (EDX) spectrometry, and CA measurements. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were also conducted to further understand the microtopographical changes on the membrane surfaces.…”
Section: Introductionmentioning
confidence: 99%
“…It has therefore been of interest to develop SiO x fabrication processes which can be applied at low temperatures. Maruyama and Tago proposed silicon oxide thin films prepared from the precursor silicon tetraacetate by a direct photochemical vapor deposition method. Thin films were obtained in the presence of oxygen gas at a substrate temperature of above 110 °C.…”
Section: Introductionmentioning
confidence: 99%
“…It has therefore been of recent interest to develop SiO x fabrication processes that can be applied at lower temperatures. Chemical vapor deposition (CVD) employs functional siloxane compounds, like tetraethylorthosilane (TEOS), that transform into silicon dioxide in nitrogen or oxygen plasmas. , Once again, these transformations require special environmental conditions and may involve toxic siloxane precursors. In 1993, Kalachev et al proposed one of the first low-temperature processes for conversion of a polysiloxane into silicon oxide.…”
Section: Introductionmentioning
confidence: 99%