1997
DOI: 10.1088/0960-1317/7/1/001
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Silicon dioxide sacrificial layer etching in surface micromachining

Abstract: Silicon dioxide sacrificial layer etching has become a major surface micromachining method to fabricate microsensors and microactuators often made of polycrystalline silicon. An overview of the SiO 2 materials available in integrated circuit manufacturing is given, and the SiO 2 etch mechanism and sacrificial layer etch kinetics are reviewed. Selectivity issues important for the proper choice of layers and etchants are addressed discussing the chemical attack of aluminum during long sacrificial SiO 2 layer etc… Show more

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Cited by 150 publications
(90 citation statements)
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“…These dimensions and materials result in spring constants ranging from 0.001 to 0.1 N m -1 . [113,114] However, there have been several recent reports where other non-traditional materials such as metals, polymers, and nanocomposites have been employed to obtain cantilever structures instead of traditional microelectronic materials. For instance, lithographically defined polymer microcantilevers were fabricated from epoxy based photoresist (SU-8) with integrated gold layers serving as the piezoresistors.…”
Section: Fabrication Of Microcantileversmentioning
confidence: 99%
“…These dimensions and materials result in spring constants ranging from 0.001 to 0.1 N m -1 . [113,114] However, there have been several recent reports where other non-traditional materials such as metals, polymers, and nanocomposites have been employed to obtain cantilever structures instead of traditional microelectronic materials. For instance, lithographically defined polymer microcantilevers were fabricated from epoxy based photoresist (SU-8) with integrated gold layers serving as the piezoresistors.…”
Section: Fabrication Of Microcantileversmentioning
confidence: 99%
“…4 Only hydrofluoric acid and some alkaline substances are capable to chemically attack it. 5,6 Thus an OF has the potential to not adversely affect the physiological environment nor be adversely affected by it. 7 Under sterile conditions, OF will minimize contamination and the risk of infection associated to invasive procedures.…”
Section: Introductionmentioning
confidence: 99%
“…In addition to HF etchants, also NH 4 /HF solutions and HNO 3 /HF acids are used to etch SiO 2 . Another technological possibility is to use vapor hydrofluoric acid, which is referred to as dry etching (Bühler et al 1997).…”
Section: Introductionmentioning
confidence: 99%