Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions

Rosenbaum, Elyse; Liu, Zhaowei; Hu, Chenming

doi:10.1109/16.249477

Cited by 97 publications

(37 citation statements)

References 31 publications

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“…2,3 On the other hand, the interface trap generation ͑⌬N it ͒ under dynamic stresses has been observed to be frequency dependent. [3][4][5][6] However, the frequency dependences reported in literature are controversial. For example, Rosenbaum et al 4 observed that ⌬N it under bipolar stress increases first and then decreases with stress frequency with a maximum at around 2 kHz, while Chen et al 5 reported that ⌬N it is essentially independent of frequency at frequencies less than 30 kHz and increases with frequency at frequencies larger than 30 kHz.…”

Section: Abnormal Enhancement Of Interface Trap Generation Under Dynamentioning

confidence: 99%

Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region

Zhu

Nakajima

Ohashi³

2005

Applied Physics Letters

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Articles you may be interested inInterface trap and oxide charge generation under negative bias temperature instability of p -channel metal-oxidesemiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics J. Appl. Phys. 98, 114504 (2005); 10.1063/1.2138372On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal-oxide-semiconductor field-effect transistors Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devices

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Section: Abnormal Enhancement Of Interface Trap Generation Under Dynamentioning

confidence: 99%

Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region

Zhu

Nakajima

Ohashi³

2005

Applied Physics Letters

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“…At frequencies several orders of magnitude higher than those tested here, the motion of holes can be manipulated thus resulting in additional enhancement in lifetime. This has been shown by Rosenbaum et al 18 The Weibull distributions of failure probability for DC and 1 Hz bipolar applied field cases are shown in Figure 5. The probability distributions exhibit similar trends for all of the cases studied with minor deviations in shape at low field conditions.…”

Section: Experimental Methodsmentioning

confidence: 69%

“…High frequencies (ƒ > 1 Hz) can more effectively arrest ionic drift and make lifetime enhancement more evident. Rosenbaum et al 18 have shown an additional enhancement in lifetime at very high frequencies, in the order of 1 Â 10 6 -1 Â 10 7 Hz. In this regime, lifetime enhancement is related to the competition between hole trapping and de-trapping processes.…”

Section: Introductionmentioning

confidence: 97%

On the dynamics of Cu ions injection into low-k nanoporous materials under oscillating applied fields

Borja

Plawsky

et al. 2013

Journal of Applied Physics

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Cu injection into low-k dielectrics was studied using oscillating bipolar field experiments coupled with a mass transport model. Cu/SiCOH/Si structures were stressed using an oscillating square bipolar applied field at 200 °C. Breakdown was defined experimentally as the time it takes for the leakage current to exceed 1 × 10−5 A under given stress conditions. Time to failure was found to depend on field oscillating frequency and amplitude of the applied field. It was determined that ion solubility primarily affects the magnitude of lifetime enhancement, while mobility affects its onset in the frequency domain. Overtime, the local field generated by the accumulation of Cu ions during bias temperature stress resists the action of the oscillating field thus inhibiting the ability to sweep ions from cathode to anode through reversal of the applied field and thereby limits the observed lifetime enhancement. Predictions from the model match trends for experimental data involving transport of Cu ions into SiCOH.

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“…For example, studies of SiO 2 reliability have revealed the reduced charge trapping characteristic under ac stress. [1][2][3][4] In addition, high-k materials have been investigated recently as potential alternatives for gate dielectric. HfO 2 seems to be the most promising gate dielectric material for future generation, since it has already shown not only excellent electrical characteristics but also compatibility with CMOS technology.…”

Section: Threshold Voltage Instability Characteristics Under Positivementioning

confidence: 99%

Threshold voltage instability characteristics under positive dynamic stress in ultrathin HfO2 metal-oxide-semiconductor field-effect transistors

Rhee

Kang

et al. 2004

Applied Physics Letters

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Articles you may be interested inInvestigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement Appl. Phys. Lett.Abnormal threshold voltage shift under hot carrier stress in Ti1−xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors

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Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions

Cited by 97 publications

References 31 publications

Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region

Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region

On the dynamics of Cu ions injection into low-k nanoporous materials under oscillating applied fields

Threshold voltage instability characteristics under positive dynamic stress in ultrathin HfO2 metal-oxide-semiconductor field-effect transistors

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