Threshold voltage instability characteristics under positive dynamic stress in ultrathin HfO2 metal-oxide-semiconductor field-effect transistors

Rhee, Se Jong; Kang, Chang Yong; Kang, Chang Seok; Choi, Chang Hwan; Choi, Rino; Akbar, M.S.; Lee, Jack C.

doi:10.1063/1.1805196

Cited by 7 publications

(3 citation statements)

References 2 publications

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“…While recent efforts have achieved significant progress in improving the electrical characteristics of organic TFT devices , operational stability remains a major issue to be resolved before organic TFT devices are commercialized for practical applications. In some TFT devices, excess charges induced by the gate electric field are believed to fall into trap states over time with continuous device operation, a behavior known as the bias‐stress effect, which is an obstacle to the long‐term operational stability for organic TFT devices, as well as those based on a‐Si:H, poly‐Si, and metal‐oxide semiconductor materials . Bias‐stress effects are largely attributed to the trapping of carriers from a gate bias‐induced conduction channel into localized electronic states .…”

Section: Introductionmentioning

confidence: 99%

Suppression of threshold voltage shifts in organic thin‐film transistors with bilayer gate dielectrics

Fukuda

Suzuki

Kobayashi

et al. 2013

Physica Status Solidi (a)

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Bias-stress effects in pentacene thin-film transistors (TFT) with parylene-C and amorphous fluoropolymers as bilayer gate dielectric layers are systematically investigated. The threshold voltage shift can be controlled systematically by changing the thicknesses of the two dielectric layers. The shift is proportional to a proportion of a potential drop between parylene-C layer to the total potential drop between gate and source electrodes, and the threshold voltage shift can be fitted to a sum of the exponential functions. Devices with optimized thicknesses of the bilayer gate dielectrics show remarkable stability under continuous gate-bias voltage stress over long periods, demonstrating shifts in threshold voltage of less than 0.5 V after 48 h.

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Section: Introductionmentioning

confidence: 99%

Suppression of threshold voltage shifts in organic thin‐film transistors with bilayer gate dielectrics

Fukuda

Suzuki

Kobayashi

et al. 2013

Physica Status Solidi (a)

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“…The observation of gate bias stress has been reported for widely different material systems, 2-6 such as OTFTs based on silicon oxide (SiO 2 ), 7,8 organic dielectric layers, [9][10][11] as well as for thin-film transistors using a-Si:H, poly-Si, and metal-oxide semiconductor materials. [12][13][14][15][16] Equation (1) describes this stretched exponential decay, where V T,max is the maximum threshold shift after infinite time, s is the time constant, and b is the stretching exponent…”

mentioning

confidence: 99%

Molecular doping for control of gate bias stress in organic thin film transistors

Hein

Zakhidov²,

Lüssem

et al. 2014

Applied Physics Letters

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The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface

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“…The bias stress (BS) instability is often observed as degradation in drain current owing to negative threshold voltage shift. [1][2][3][4] The current degradation is caused by charge trapping at the semiconductor/insulator interface [5][6][7] or contact regions. 8,9) Various insulating materials of OTFTs have been investigated in order to reduce the BS instability, such as SiO 2 with a self-assembling monolayer, 5,10) CYTOPÔ, 11) and polyimide (PI).…”

Section: Introductionmentioning

confidence: 99%

Pulsed Bias Stress in Pentacene Thin Film Transistors and Effect of Contact Material

Miyadera

Minari

Wang

et al. 2010

Jpn. J. Appl. Phys.

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The current instability of pentacene organic thin film transistors (OTFTs) under pulse bias stress and the effect of contact material are reported. OTFTs with Cu electrodes and Au electrodes were compared. The OTFTs with Cu electrodes show smaller current change and almost independent of frequency, which can be explained by the reduction of the density of deep trap sites existing at the contact regions. The use of Cu electrodes causes the elimination of trap sites and realizes reversible trapping and detrapping.

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Threshold voltage instability characteristics under positive dynamic stress in ultrathin HfO2 metal-oxide-semiconductor field-effect transistors

Cited by 7 publications

References 2 publications

Suppression of threshold voltage shifts in organic thin‐film transistors with bilayer gate dielectrics

Suppression of threshold voltage shifts in organic thin‐film transistors with bilayer gate dielectrics

Molecular doping for control of gate bias stress in organic thin film transistors

Pulsed Bias Stress in Pentacene Thin Film Transistors and Effect of Contact Material

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