Silicon Diode Uncooled FPA With Three-Dimensional Integrated CMOS Readout Circuits

Xue, Xiangxin; Xiong, Hao; Song, Zhigong; Du, Yuxin; Wu, Dong; Pan, Liyang; Wang, Zheyao

doi:10.1109/jsen.2018.2878098

Cited by 16 publications

(5 citation statements)

References 38 publications

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“…These applications are often size constrained, while requiring high energy efficiency and stability [1][2][3][4]. With the advantages of low cost, small size, and good uniformity, uncooled infrared focal plane arrays (IRFPA) can be applied in IoT applications, such as composition analysis, smart monitoring, and spectral analysis [5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

“…Currently, the mainstream IRFPAs adopt vanadium oxide (VO X ) [5,6] or amorphous silicon (α-Si) microbolometers [7,8], or silicon diodes as the thermosensitive sensors [9,10]. Compared with VO X /α-Si microbolometers, silicon diodes are fabricated with monocrystalline silicon and have the advantages of CMOS process compatibility, low noise, high uniformity, and huge potential for pixel size reduction [11]. However, the temperature sensitivity of silicon diodes is lower than that of VO X /α-Si microbolometers, which leads to smaller signal voltage [12].…”

Section: Introductionmentioning

confidence: 99%

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A Low Power ROIC with Extended Counting ADC Based on Circuit Noise Analysis for Sensor Arrays in IoT System

Zhou

et al. 2022

Journal of Sensors

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As the Internet of Things (IoT) is rapidly integrated into our daily life, the demand for high performance readout integrated circuit (ROIC) design for sensor arrays is boosting. This paper presents a low power, low noise ROIC with 14-bit column-parallel extended counting (EC) ADCs for sensor arrays targeting the IoT applications. The proposed EC-ADC adopts a pseudodifferential architecture to cancel even-order nonlinearity. The analog front-end is a G m stage, which employs a current-reuse topology to boost the transconductance and reduce noise without increasing current consumption. The upper 9-bit conversion is implemented during integration, and the residual voltage is converted by a 5-bit single-slope (SS) ADC, where the comparator is reused. A ping-pong integrator is proposed to reduce the reset time and improve linearity, eliminating the power-hungry CTIA structure. The ROIC is designed in 0.18 μm 1P5M CMOS process for a 640 × 480 sensor array. Power consumption of the ROIC is 33 mW, and each column ADC consumes 40.1 μW. Simulation results show an input-referred noise of 0.89 LSB (1.74 μVrms), an integral nonlinearity of +0.92/-0.70 LSB, an ENOB of 12.87 bits, and a FoM of 131.1 fJ/step.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Low Power ROIC with Extended Counting ADC Based on Circuit Noise Analysis for Sensor Arrays in IoT System

Zhou

et al. 2022

Journal of Sensors

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“…1 and 2, respectively. Silicon diodes are used as radiation detectors in pixel because of their uniformity, noise characteristic and potential for pixel size reduction [6]. The sensitive and blind diodes are driven in the constant current bias.…”

Section: Proposed Roic Architecturementioning

confidence: 99%

A Readout Circuit with Current-Compensation-Based Extended-Counting ADC for 1024×768 Diode Uncooled Infrared Imagers

Shi

Zhang

et al. 2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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This paper presents a low-power readout circuit with 14-bit column-level extended-counting ADC for 17 -pitch × silicon diode uncooled infrared imagers. The ADC's coarse conversion adopts a current-mode DAC to feedback charge into a CTIA-based integrator during integration and the fine conversion is implemented by a SAR ADC after integration. A current self-compensator and a modified DAC are proposed to reduce more than 50% power of the overall integrator compared with conventional structure. The × readout circuit has been fabricated in the 0.18 1P5M CMOS process. Power consumption of the readout circuit is and each column ADC only consumes. Simulation results show that the RMS noise of the readout circuit is 0.9LSB and nonlinearity is 0.06% at 30fps.

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“…Two main temperature sensing mechanisms are employed in commercial microbolometers: silicon on insulator (SOI) diode-based [2] and resistive-based [3] sensing. In SOI diode-based sensing, the wellknown dependency of the pn junction diode's saturation current on temperature is utilized for temperature sensing [4].…”

Section: Introductionmentioning

confidence: 99%

Electro-Optical Characterization of an Amorphous Germanium-Tin (Ge1-XSnx) Microbolometer

Bahaidra

Al‐Khalli

Hezam

et al. 2023

J Infrared Milli Terahz Waves

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The utilization of amorphous germanium-tin (Ge 1 − x Sn x ) semiconducting thin lms as temperature sensing layers in microbolometers was recently presented and patented. The work in this paper started by extending the latest study to acquire better characteristics of the Sn concentrations % for microbolometer applications. In this work, Ge1-xSnx thin lms with various Sn concentrations %, x, where 0.31 ≤ x ≤ 0.48 we sputter deposited. Elemental composition was evaluated using Energy Dispersive X-ray (EDX) spectroscopy. Surface morphology was evaluated using Atomic Force Microscopy (AFM) revealing average roughness values between ~ 0.2-0.8 nm. Sheet resistance versus temperature measurements was performed and analyzed revealing temperature coe cients of resistances, TCRs, ranging from − 3.11%/K to -2.52%/K for x ranging from 0.31 to 0.40. The Ge1-xSnx thin lm was found to depart the semiconducting behavior at 0.40 < x ≤ 0.48. Empirical relationships are derived relating resistivity, TCR, and Sn concentration % for amorphous Ge1-xSnx thin lms. One of the lms with 31% Sn concentration (Ge 0.69 Sn 0.31 ) was used to fabricate 10×10 µm2 microbolometer prototypes using electron-beam lithography and liftoff techniques and the microbolometer is fabricated on top of oxidized silicon substrates with no air gap between them. The noise behavior and the maximum detected signal of the fabricated microbolometer were measured. The signal-to-noise ratio, voltage responsivity, and noise equivalent power values of the prototypes were calculated. Finally, the expected performance of the microbolometer when fabricated in an air bridge is calculated.

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Silicon Diode Uncooled FPA With Three-Dimensional Integrated CMOS Readout Circuits

Cited by 16 publications

References 38 publications

A Low Power ROIC with Extended Counting ADC Based on Circuit Noise Analysis for Sensor Arrays in IoT System

A Low Power ROIC with Extended Counting ADC Based on Circuit Noise Analysis for Sensor Arrays in IoT System

A Readout Circuit with Current-Compensation-Based Extended-Counting ADC for 1024×768 Diode Uncooled Infrared Imagers

Electro-Optical Characterization of an Amorphous Germanium-Tin (Ge1-XSnx) Microbolometer

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