Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel–Poon models

Lou, Lifang; Liou, Juin J.; Dong, Shurong; Han, Yan

doi:10.1016/j.sse.2008.11.007

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Scr Macro-model1

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Cited by 3 publications

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“…Enhanced macro-model presented in [19] is used as testcase model for SCR characterization. It comprises of threepin VBIC n-type BJT model, standard SPICE Gummel-Poon (SGP) p-type BJT model, substrate and n-well resistance models.…”

Section: Scr Macro-modelmentioning

confidence: 99%

An Automated ESD Model Characterization Method

Napravnik¹,

Jakovenko²

2018

RADIOENGINEERING

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Novel automated simulator-independent ESD model characterization method based on Differential evolution and Nelder-Mead Simplex algorithms is presented in this paper. It offers an alternative for time and humanresources demanding manual characterization that is still widely used. The paper also presents stable macro-models of the four most often used snapback-based protection devices in CMOS technologies, i.e., NMOST and three variants of silicon-controlled rectifier structure. These macro-models were used for evaluation of the proposed method and the results are included and discussed.

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Section: Scr Macro-modelmentioning

confidence: 99%