Silicon Carbide Vertical JFET Operating at High Temperature

Vassilevski, Konstantin; Hilton, K.P.; Wright, N. G.; Uren, Michael J.; Munday, A.; Никитина, И.П.; Hydes, A.J.; Horsfall, Alton B.; Johnson, C.M.

doi:10.4028/www.scientific.net/msf.600-603.1063

Cited by 4 publications

(5 citation statements)

References 15 publications

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“…This interaction leads to the formation of nickel silicide which is used as ohmic 10 or Schottky 11,12 contacts in silicon carbide devices. Furthermore, nickel itself is used as a high selectivity mask for reactive ion etching of silicon carbide as well as a mask for ion implantation 12,13 . These broad applications of nickel and nickel silicide films in SiC processing make the fabrication of FLG films from nickel silicide very attractive in terms of process compatibility.…”

Section: Introductionmentioning

confidence: 99%

Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

Escobedo-Cousin

Vassilevski

Hopf

et al. 2013

Journal of Applied Physics

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Patterned few-layer graphene (FLG) films were grown by local solid phase epitaxy from nickel silicide supersaturated with carbon, following a fabrication scheme which allows the formation of self-aligned ohmic contacts on FLG and is compatible with conventional SiC device processing methods. The process was realised by the deposition and patterning of thin Ni films on semiinsulating 6H-SiC wafers followed by annealing and the selective removal of the resulting nickel silicide by wet chemistry. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to confirm both the formation and subsequent removal of nickel silicide. The impact of process parameters such as the thickness of the initial Ni layer, annealing temperature, and cooling rates on the FLG films was assessed by Raman spectroscopy, XPS and atomic force microscopy (AFM).The thickness of the final FLG film estimated from the Raman spectra varied from 1 to 4 monolayers for initial Ni layers between 3 and 20 nm thick. Self-aligned contacts were formed on these patterned films by contact photolithography and wet etching of nickel silicide, which enabled the fabrication of test structures to measure the carrier concentration and mobility in the FLG films.A simple model of diffusion-driven solid phase chemical reaction was used to explain formation of the FLG film at the interface between nickel silicide and silicon carbide.

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Section: Introductionmentioning

confidence: 99%

Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

Escobedo-Cousin

Vassilevski

Hopf

et al. 2013

Journal of Applied Physics

Self Cite

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“…The electrical properties of Schottky diodes subsequently formed on such surfaces are particularly sensitive to damage from annealing, which is important when the implants are used for JTE termination of Schottky diodes, for example. To reduce these effects, various authors have annealed SiC in a dilute SiH 4 ambient [1], or used either AlN [2,3] or graphite encapsulation [3,4].…”

Section: Introductionmentioning

confidence: 99%

Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation

Wang

Mikhov

Skromme

2006

MSF

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The impact of high temperature annealing using graphite encapsulation (formed by baking photoresist) on the electrical properties of Ni Schottky diodes formed on the annealed surfaces is studied. The surface morphology is also characterized by atomic force microscopy (AFM). Annealing for 10 minutes at temperatures up to 1800 °C with graphite encapsulation actually reduces the high-current ideality factor of the diodes while raising the current-voltage barrier height (linearly extrapolated to unity ideality factor) from 1.453 V to 1.67-1.73 V. Excess leakage current occurs only in a subset of diodes, which are believed to be affected by extended defects. The AFM images show no significant surface roughening, and the graphite can be removed after processing. This encapsulation method is found to be highly effective in preserving the electronic properties of the surface during high temperature annealing.

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“…Energy harvesting devices often produce voltages which are unusable directly by electronic loads and so require power management circuits to convert the electrical output to a level which is usable by monitoring electronics and sensors. Here, we demonstrate a self-starting DC-DC converter designed to boost the low DC output voltage of a thermoelectric generator to a level sufficient to run a SiC sensor circuit for wireless monitoring of inhospitable environments [4][5][6][7]. These environments may be subject to high temperatures in the case of exhaust gas monitoring in turbine engines or oven environments, they may also be subject to radiation in the nuclear industry whether they are used in power generation or waste monitoring.…”

Section: Introductionmentioning

confidence: 98%

Novel SiC self starting DC-DC converter for high temperature wireless sensor nodes

et al. 2012

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We report on the first demonstration of a novel self starting DC-DC converter to supply power to a wireless sensor node for deployment in high temperature environments. Utilising SiC devices we have realised a novel boost converter topology which is suitable for boosting a low voltage to a level sufficient to power a sensor node at temperatures up to 300 °C. This topology is able to self start and so requires no external control circuitry, making it ideal for energy harvesting applications, where the energy supply may be intermittent. Here we demonstrate the potential of this topology to power a direct frequency modulated Colpitts oscillator for RF transmission, when used in conjunction with a thermoelectric generator.

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Silicon Carbide Vertical JFET Operating at High Temperature

Cited by 4 publications

References 15 publications

Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation

Novel SiC self starting DC-DC converter for high temperature wireless sensor nodes

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