Silicon carbide thin films as nuclear ceramics grown by laser ablation

A new slit stabilization system for the beam energy at the Bucharest tandem Van de Graaff accelerator

“…This extension of the energy range on the low energy side and the highly improved stability for the energy of the beam is required at Bucharest tandem accelerator in application experiments like ion beam analysis [8] and AMS [9], and especially in basic research like cross-section measurements for nuclear astrophysics [10], fast timing measurements for nuclear structure studies [11], and nuclear resonant reaction studies [12]. All the experiments based on gamma ray energy resonance [12] or experiments where energy thresholds are very important [10], make use of good energy stability, good monochromaticity, and energy resolution of the beam.…”

Characterization of structures and properties of amorphous nanostructured SiC thin films deposited on AISI 304 stainless steel using pulsed laser deposition

“…1 –3 Silicon carbide (SiC) is considered as one of the most important protective coatings for most of the metallic substrates used for tribological applications due to the outstanding thermal, mechanical and chemical properties. 2,4 –7 These exceptional properties of SiC are attributed to the strong covalent bond between silicon and carbon and its tetrahedral coordination. 8,9 It is believed that the presence of ceramic materials in the form of nanostructure grains can be of great significance to improve surface properties of structural steel.…”

“…8,9 It is believed that the presence of ceramic materials in the form of nanostructure grains can be of great significance to improve surface properties of structural steel. 4 –7 Crystalline nanostructure SiC (c-SiC) thin films have received great attention for several potential applications in protective and tribological coatings and microelectronic and optoelectronic devices due to the outstanding thermal, mechanical and chemical properties. 5,6 However, synthesis of c-SiC thin films require high temperature (>600°C), 4 –6 which limit its usage as a protective coating for metallic substrates due to phase transformations at temperatures higher than 400°C.…”

Lézerrel kezelt szilícium felületek, valamint impulzuslézeres rétegépítéssel előállított amorf szilícium és SixC vékonyrétegek ellipszometriai vizsgálata

“…Hidrogén bevezetésével, hasonlóan az amorf szilíciumhoz, stabilizálni lehet a szerkezetet a logó kötések megkötésével [39]. SiC vékonyrétegeket készítettek PLD-vel is sztöchiometrikus SiC céltárgyak fűtött hordozóra való leválasztásával [35,36,[40][41][42][43][44][45][46]. A PLD-vel készített SiC rétegek előnye a sztöchiometrikus összetétel [36], ami a többi módszer esetében nem mindig teljesül.…”

“…Az ellipszometriai leírásra többféle modell használatos. Kristályos esetben a kis abszorpció miatt elegendő lehet Cauchy-modellt használni [46]. A leggyakrabban azonban oszcillátor modelleket használnak, pl.…”