Silicon Carbide Power Devices

Influence of temperature and dimension in a 4H-SiC vertical power MOSFET

“…The figure shows that the drain current is increased by 18.83% (I D =14.26 A at V G =20 V) with vertical scaling, decreased by 10% (I D =10.8 A at V G =20 V) with the lateral scaling by 25%, decreased by 33.33% (I D =8 A at V G =20 V) with lateral scaling by 50%, and decreased by 51.67% (I D =5.8 A at V G =20 V) with lateral scaling by 50% but keeping the same channel length 6 μm at high gate bias. Figure 6 illustrates that the transfer characteristics at high drain bias V D =20V provides a higher output resistance compared to low drain bias V D =4V represented in figure 5, which is agreed with [25].…”

Tuning the thermal and insulation properties of bismuth borate glass for SiC power electronics packaging

“…1 Due to the wider energy bandgap as compared with Si, SiC chip is the better choice for power electronics operating at higher temperatures (>200 • C) and higher voltages (>600 V). [2][3][4][5][6][7] To ensure the stable operation of SiC power devices, highly reliable packaging is required. However, the low high-temperature stability of epoxy-based encapsulation materials, especially for SiC and GaN devices operating at >200 • C. 5,6,8 The good processing and insulating properties of glass compared with other materials, such as polymer and oxide, makes it a promising packaging material to fulfil the function of insulating and destabilizing the highly mobile alkali metal ions on electronic devices.…”

“…The boom of electronic vehicles boosts the growth market for semiconductor power devices 1 . Due to the wider energy bandgap as compared with Si, SiC chip is the better choice for power electronics operating at higher temperatures (>200°C) and higher voltages (>600 V) 2–7 . To ensure the stable operation of SiC power devices, highly reliable packaging is required.…”

Evaluation of silicon carbide Schottky barrier diode within guard ring by multifunctional scanning probe microscopy

“…The improvement in internal structures includes the application of a trench gate structure and super junction structure, 1,2) as well as the optimization of a termination structure. [3][4][5][6][7][8][9][10][11][12] However, the performance improvement of silicon (Si) power devices has approached the limit. 13,14) It is difficult to achieve lower on-resistance and higher breakdown voltages using Si power devices.…”

“…The SBD is made to exhibit a high breakdown voltage and low on-resistance by providing a p-layer in the termination structure. [8][9][10][11][12] This p-layer is called a guard ring. Simulations and experimental results on the effects of various guard rings have been reported.…”