Silicon carbide MESFETs performances and application in broadcast power amplifiers

Temçamani, Farid; Pouvil, P.; Noblanc, O.; Brylinski, C.; Bannelier, P.; Darges, Bernard; Prigent, J.P.

doi:10.1109/mwsym.2001.966976

Cited by 15 publications

(8 citation statements)

References 5 publications

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“…The output characteristics are 120 W in pulsed operation at 3.1 GHz, and 80 W in CW operation [8]. The reported output power density has exceeded those of Si and GaAs [9][10][11]. An output power density of 7.2 W/mm was obtained by CREE (United States), as reported at a meeting on SiC held in September 2002 in Europe (European Conference on Silicon Carbide and Related Materials).…”

Section: Introductionmentioning

confidence: 92%

Development of high‐frequency SiC‐MESFETs

Arai

Honda

Ono

et al. 2003

Electron Comm Jpn Pt II

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Section: Introductionmentioning

confidence: 92%

Development of high‐frequency SiC‐MESFETs

Arai

Honda

Ono

et al. 2003

Electron Comm Jpn Pt II

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“…There is an increasing demand for higher power, higher PAE, and broader bandwidth power devices for satellite communication and military radar applications [1,2]. High power semiconductor electronics devices mostly fabricated by silicon are gradually ceasing to satisfy the increasingly stringent requirements of volume, service life, reliability etc.…”

Section: Introductionmentioning

confidence: 99%

107W CW SiC MESFET with 48.1% PAE

Tao¹,

Bai²

2013

2013 5th IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications

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In the paper, 30mm high-power SiC MESFETs have been fabricated. By load-pull testing at 1.5 GHz and 48V drain to source voltage , packaged 2 30mm SiC MESFET transistors were demonstrated with output power higher than 107W with 48.1% PAE, and the gain was 10.3 dB under continuous wave RF operation. Small gate periphery divices of 1mm SiC MESFET exhibited 35 dBm output power with more than 55% PAE, and the gain was 12.3 dB under continuous wave RF operation at 1.5 GHz and 48V drain to source voltage.

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“…Therefore, widebandgap devices that provide high breakdown voltage, high electron saturation velocity, and high temperature robustness have been recently developed to supply high power and high efficiency power amplifiers at the high frequency region over 2 GHz. Among wide-bandgap devices, the silicon carbide metal semiconductor field effect transistor (SiC MESFET) has been utilized for various power amplifiers [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

A high‐efficiency class‐E power amplifier using SiC MESFET

Lee¹,

Jeong²

2007

Micro & Optical Tech Letters

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This article reports a high efficiency class-E power amplifier using a SiC MESFET, which is designed and tested at 2.14 GHz. To improve output power and efficiency by suppressing harmonic powers, an output matching circuit using the transmission lines is used. From measured results for a single tone, the harmonic power levels are maintained below Ϫ58 dBc at a whole output power level. The peak power-added efficiency of 72.3% with a power gain of 10.27 dB is achieved at an output power of 40.27 dBm. ABSTRACT: It can be shown that a hyperbolic frequency-modulated waveform is Doppler-invariant only when the Doppler factor is a constant number, i.e., the target has a constant velocity and along the direction from the radar to the target. If the target moves in an arbitrary direction, the degradation of the pulse compression caused by the mismatch between the reflected signal and the matched filter may still exist.In this paper, we demonstrate that the Doppler effect caused by the moving target in an arbitrary direction can be approximated by a target with an initial velocity and a constant acceleration along the direction from the radar to the target, which results in a frequency shift in the reflected waveform. Therefore, a bank of matched filters with preselected values of frequency shifts can be utilized to compensate for the Doppler effect. Numerical examples, with target moving in an arbitrary direction, are presented to illustrate this effect, which has been successfully compensated by shifting the frequency response of the matched filter.

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Silicon carbide MESFETs performances and application in broadcast power amplifiers

Cited by 15 publications

References 5 publications

Development of high‐frequency SiC‐MESFETs

Development of high‐frequency SiC‐MESFETs

107W CW SiC MESFET with 48.1% PAE

A high‐efficiency class‐E power amplifier using SiC MESFET

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