107W CW SiC MESFET with 48.1% PAE

Tao, Yonghong; Bai, Song

doi:10.1109/mape.2013.6689931

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2019

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“…So, the PLDC has a great effect on improving the PAE of the device. In the paper 107 W CW SiC MESFET with 48.1% PAE, the experimental PAE of the device at 2 W (33 dBm) is close to 25% [17]. The PAE of the DR-MESFET is 23.43% at 0.63 W (28 dBm).…”

Section: Resultsmentioning

confidence: 99%

An Improved 4H-SiC MESFET with a Partially Low Doped Channel

Jia¹,

Tong²,

Li³

et al. 2019

Micromachines

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An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS and ISE-TCAD software. This structure has a partially low doped channel (PLDC) under the gate, which increases the PAE of the device by decreasing the absolute value of the threshold voltage (Vt), gate-source capacitance (Cgs) and saturation current (Id). The simulated results show that with the increase of H, the PAE of the device increases and then decreases when the value of NPLDC is low enough. The doping concentration and thickness of the PLDC are respectively optimized to be NPLDC = 1 × 1015 cm−3 and H = 0.15 μm to obtain the best PAE. The maximum PAE obtained from the PLDC-MESFET is 43.67%, while the PAE of the DR-MESFET is 23.43%; the optimized PAE is increased by 86.38%.

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Section: Resultsmentioning

confidence: 99%