An Improved 4H-SiC MESFET with a Partially Low Doped Channel

Jia, Haiqiang; Tong, Yibo; Li, Tao; Zhu, Shunwei; Li, Yuan; Wang, Xingyu; Zeng, Tonghui; Yang, Yintang

doi:10.3390/mi10090555

Cited by 8 publications

(3 citation statements)

References 14 publications

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“…How to improve the performance of 4H-SiC MESFET has become a challenge. Methods such as adding field plates [ 7 ], improving gate structure [ 8 , 9 , 10 ] and improving channel structure [ 11 , 12 , 13 , 14 ] have been used to improve the performance of devices. With the continuous reduction in device size, the requirements of device design for power consumption and efficiency become increasingly higher.…”

Section: Introductionmentioning

confidence: 99%

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

et al. 2021

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A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure.

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Section: Introductionmentioning

confidence: 99%

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

et al. 2021

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“…Thus, some improved structures have been reported for improving the power added efficiency. Such as a novel 4H-SiC MESFET with multi-recessed p-buffer layer for high energy-efficiency applications [8], an improved UU-MESFET with high power added efficiency [9], multi-recessed 4H-SiC metal semiconductor field effect transistor (MRD-MESFET) with high power added efficiency [10], an improved 4H-SiC MESFET with a partially low doped channel [11]. However, the trade-off between PAE and DC AC parameters is still a troublesome problem.…”

Section: Introductionmentioning

confidence: 99%

Improved DRUS 4H-SiC MESFET with High Power Added Efficiency

Jia

et al. 2019

Micromachines

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A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper. The structure (LDUS-MESFET) introduced layered doping under the lower gate of the channel, while optimizing the thickness of the undoped region. Compared with the double-recessed 4H-SiC MESFET with partly undoped space region (DRUS-MESFET), the power added efficiency of the LDUS-MESFET is increased by 85.8%, and the saturation current is increased by 27.4%. Although the breakdown voltage of the device has decreased, the decrease is within an acceptable range. Meanwhile, the LDUS-MESFET has a smaller gate-source capacitance and a large transconductance. Therefore, the LDUS-MESFET can better balance DC and AC characteristics and improve power added efficiency (PAE).

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“…Their study focused on the influences of output power on the turn-on Vgs characteristics for high-power and high-frequency application. There is also a paper addressing the design and simulation of an improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) [3].…”

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confidence: 99%