A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Jia, Haiqiang; Dong, Mengyu; Wang, Xiaowei; Zhu, Shunwei; Yang, Yong

doi:10.3390/mi12050488

Cited by 5 publications

(1 citation statement)

References 22 publications

(26 reference statements)

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“…Silicon-carbide devices is a major type used in the power systems. The low on-state resistance, higher power density, increased high work frequency, and the widely forbidden band all stand out [1][2][3]. The small size and high reliability of the SiC MOSFET are both necessary to minish power dissipation and increase the efficiency.…”

Section: Introductionmentioning

confidence: 99%

SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss

Ran

Huang

et al. 2022

Micromachines

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A novel Silicon-Carbide heterojunction U-MOSFET embedded a P-type pillar buried in the drift layer (BP-TMOS) is proposed and simulated in this study. When functioning in the on state, the merged heterojunction structure will control the parasitic body diode, and the switching loss will decrease. Moreover, to lighten the electric field on the gate oxide corner, a high-doped L-shaped P+ layer near the heterojunction beneath the gate oxide was introduced; thus, the gate oxide reliability improved. A p-type pillar is introduced in the drift layer. The p-type pillar can assistant the drift layer to deplete. Thus, the specific on-resistance for BP-TMOS can be reduced with an increase in the N-drift region’s doping concentration. Compared to the traditional SiC MOSFET (C-TMOS), the specific on-resistance decreased by 20.4%, and the breakdown voltage increased by 53.7% for BP-TMOS, respectively. Meanwhile the device exhibits a 55% decrease and a 69.7% decrease for the switching loss and gate to drain charge.

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Section: Introductionmentioning

confidence: 99%