Silicon Carbide for Realization of “Telescope” Ion Detectors

Torrisi, L.; Cannavó, Antonino

doi:10.1109/ted.2016.2612237

Cited by 10 publications

(5 citation statements)

References 15 publications

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“…The higher bandgap (3.26 eV) compared to the Silicon one (1.12 eV) allows to be "blind" to the visible light [2,3], decreasing the noise to the visible light emission, particularly useful for applications in plasma diagnostics [4,5]. Moreover, the higher electron mobility allows a high count rate frequency, while the low reverse current (two-three orders of magnitude lower with respect to silicon, at room temperature) and the high displacement energy of 25 eV with respect to the Si (of 15 eV) make such detectors resistant to the high temperatures [6] and to the radiation doses [7]. Silicon Carbide (SiC) detectors were tested at MUT (Military University of Technology, Warsaw, Poland) to detect plasma created from a double-stream gas-puff target [8] in TOF (time-offlight) mode.…”

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confidence: 99%

Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Torrisi

Wachulak²,

Fiedorowicz

et al. 2020

J. Inst.

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A: Silicon carbide detectors were employed to characterize the plasma produced by laser interaction with a double stream gas-puff target source. A 10 Hz repetition rate Nd:YAG laser (1064 nm wavelength, 0.69 J pulse energy and 3 ns pulse duration) was employed to irradiate different gas-puff targets (Argon, Xenon and Sulfur hexafluoride), at different pressures (1-10 bar), emitting plasma radiation in different wavelength ranges (ultraviolet, extreme ultraviolet and soft X-rays). The emission produced by the laser radiation was properly filtered (employing Titanium, Aluminium, Zirconium and Calcium fluoride filters), to narrow down the broad-band emission of the generated plasma. The SiC detectors' signals were compared with a calibrated traditional silicon detector evaluating their differences, i.e. taking into account the plasma stability, the time trace profile and the characteristics of the gas-puff target source. The obtained results, which will be presented and discussed, allow to improve the geometry and configuration of the SiC detectors avoiding saturation and charge recombination effects and getting a better proportionality to the energy and fluence of the detected radiations. K: Detectors for UV, visible and IR photons; Plasma generation (laser-produced, RF, x ray-produced); Radiation monitoring; X-ray detectors 1Corresponding author.

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confidence: 99%

Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Torrisi

Wachulak²,

Fiedorowicz

et al. 2020

J. Inst.

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“…The inset shows a zoom of the ΔE − E plot for small ΔE values. b Uncalibrated ΔE − E plot obtained in the reaction 68 Ni + 12 C at 28 MeV/nucleon considering two subsequently crossed strips of a FARCOS telescope (adapted from [144]) sections under plasma environment of fundamental importance for nuclear astrophysics [143].…”

Section: Asfin: Pushing the Low-thickness Limit Of Solid-state Devicesmentioning

confidence: 99%

Trends in particle and nuclei identification techniques in nuclear physics experiments

et al. 2022

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Particle identification techniques are fundamental tools in nuclear physics experiments. Discriminating particles or nuclei produced in nuclear interactions allows to better understand the underlying physics mechanisms. The energy interval of these reactions is very broad, from sub-eV up to TeV. For this reason, many different identification approaches have been developed, often combining two or more observables. This paper reviews several of these techniques with emphasis on the expertise gained within the current nuclear physics scientific program of the Italian Istituto Nazionale di Fisica Nucleare (INFN).

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“…The presented SiC detectors can be employed to monitor plasma produced from compact laboratory sources and from large facilities such as accelerators and for transport of charge particle beams. They can be employed to analyze the ion-gas and ion-thin foil interactions in stripper systems producing SXR emission, for RBS, ERDA, NRA, and PIXE analysis, for electron and ion detection in the time-of-flight configuration, and for spectroscopy, monitoring the production of characteristic x-ray emission, as reported widely in the literature [6,7,8,9,[11][12][13][14][15][16]21]. SiC detectors present a significant advantage with respect to the traditional Si detector, due to the higher-energy band gap, which makes the detector less sensitive to the VIS light produced by the laserproduced plasma.…”

Section: Discussionmentioning

confidence: 99%

“…The suitability of high-quality epitaxial layers allows the fabrication of high-performance SiC detectors based on Schottky diodes and p-n junctions. The SiC detectors show many advantages with respect to silicon [8], such as their high efficiency, working temperature, and very short rise time, due to their particular design that leaves a fraction of the active region directly exposed to the impinging radiation [9]. Moreover, their high displacement energy (of 25 eV with respect to the Si of 15 eV) [10] makes them high temperature and radiation resistant, and their high electron and hole mobility allows us to use them for high-frequency counting mode operation.…”

Section: Introductionmentioning

confidence: 99%

Monitoring of the plasma generated by a gas-puff target source

Torrisi¹,

Wachulak

Fiedorowicz

et al. 2019

Phys. Rev. Accel. Beams

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A 10-Hz repetition rate, Nd:YAG pulsed laser (λ ¼ 1064 nm, pulse energy of 0.69 J, pulse duration of 3 ns) irradiated a Xe double-stream gas-puff target source. The interaction gives rise to the formation of plasma and emission of soft x-ray and extreme ultraviolet radiation. The produced plasma was investigated and characterized by a silicon carbide (SiC) and a commercial silicon (Si) detector, applying different spectral filters. Some parameters such as the plasma stability and its evolution (time trace profile and pulse time duration) are presented and discussed, evidencing pros and cons of the employment of SiC detectors with respect to the traditional Si for laser-generated plasma diagnostic.

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Silicon Carbide for Realization of “Telescope” Ion Detectors

Cited by 10 publications

References 15 publications

Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Trends in particle and nuclei identification techniques in nuclear physics experiments

Monitoring of the plasma generated by a gas-puff target source

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