Silicon carbide for high resolution X-ray detectors operating up to 100°C

Bertuccio, G.; Casiraghi, R.; Cetronio, A.; Lanzieri, C.; Nava, F.

doi:10.1016/j.nima.2003.11.413

Cited by 75 publications

(33 citation statements)

References 11 publications

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“…SiC Schottky detectors on epitaxial layers can be operated with a high signal-to-noise ratio even above the room temperature due to its high bandgap (low leakage current). [8][9][10] However, intrinsic defects and impurity related complexes have been reported in as-grown SiC epilayers as well. 11,12 Many of these defects are electrically active and can lead to increased detector leakage current and poor carrier lifetime and mobility by acting as trap or recombination/generation centers.…”

Section: à2mentioning

confidence: 99%

Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

Chaudhuri

Nguyen

Mandal

2014

Journal of Applied Physics

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Spectroscopic performance of Schottky barrier alpha particle detectors fabricated on 50 lm thick n-type 4H-SiC epitaxial layers containing Z 1/2 , EH 5 , and Ci1 deep levels were investigated. The device performance was evaluated on the basis of junction current/capacitance characterization and alpha pulse-height spectroscopy. Capacitance mode deep level transient spectroscopy revealed the presence of the above-mentioned deep levels along with two shallow level defects related to titanium impurities (Ti(h) and Ti(c)) and an unidentified deep electron trap located at 2.4 eV below the conduction band minimum, which is being reported for the first time. The concentration of the lifetime killer Z 1/2 defects was found to be 1.7 Â 10 13 cm À3. The charge transport and collection efficiency results obtained from the alpha particle pulse-height spectroscopy were interpreted using a drift-diffusion charge transport model. Based on these investigations, the physics behind the correlation of the detector properties viz., energy resolution and charge collection efficiency, the junction properties like uniformity in barrier-height, leakage current, and effective doping concentration, and the presence of defects has been discussed in details. The studies also revealed that the dominating contribution to the charge collection efficiency was due to the diffusion of charge carriers generated in the neutral region of the detector. The 10 mm 2 large area detectors demonstrated an impressive energy resolution of 1.8% for 5486 keV alpha particles at an optimized operating reverse bias of 130 V. V C 2014 AIP Publishing LLC. [http://dx

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Section: à2mentioning

confidence: 99%

Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

Chaudhuri

Nguyen

Mandal

2014

Journal of Applied Physics

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“…For low energy (<20 keV) X-ray detection, SiC potentially offers higher spectroscopic performance than silicon for high temperature measurements, due to the lower reverse bias current density Bertuccio et al 2004). Measurements of a gold contact 4H SiC Schottky diode at 340K show a current density of 17 pA/cm 2 , more than two orders of magnitude lower than commercial silicon devices.…”

Section: Typical Device Performancementioning

confidence: 99%

New materials for radiation hard semiconductor dectectors

Sellin

Vaitkus

2006

Nuclear Instruments and Methods in Physics Research Section A:

175

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We present a review of the current status of research into new semiconductor materials for use as particle tracking detectors in very high radiation environments. This work is carried out within the framework of the CERN RD50 collaboration, which is investigating detector technologies suitable for operation at the proposed Super-LHC facility (SLHC). Tracking detectors operating at the SLHC in this environment will have to be capable of withstanding radiation levels arising from a luminosity of 10 35 cm -2 s -1 which will present severe challenges to current tracking detector technologies. The "new materials" activity within RD50 is investigating the performance of various semiconductor materials that potentially offer radiation hard alternatives to silicon devices. The main contenders in this study are silicon carbide, gallium nitride and amorphous silicon. In this paper we review the current status of these materials, in terms of material quality, commercial availability, charge transport properties, and radiation hardness studies. Whilst these materials currently show considerable promise for use as radiation hard tracking detectors, their ultimate success will depend on the continued improvement of the availability of high quality material.

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“…• LUNA-MV experiment (LNGS,Ge,Mi,Pa,Rm,Na,To) is developing the neutron detector for measuring 13 C(α, n) 16 O and 22 Ne(α, n) 25 Mg reactions at very low beam energies. In the exothermic reaction 13 C(α, n) 16 O with Q ≃ 2.2 MeV at E α =0.2-0.8 the energy of the produced neutron varies from 2.2 up to 2.8 MeV.…”

Section: Pos(ifd2015)023mentioning

confidence: 99%

“…In the exothermic reaction 13 C(α, n) 16 O with Q ≃ 2.2 MeV at E α =0.2-0.8 the energy of the produced neutron varies from 2.2 up to 2.8 MeV. In an organic scintillator coupled to a PMT the neutrons of this energy will produce up to 700 photoelectrons (p.e.).…”

Section: Pos(ifd2015)023mentioning

confidence: 99%

New neutron detections

Osipenko¹

2017

Proceedings of INFN Workshop on Future Detectors — PoS(IFD2015)

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Neutron detection is a broad field for fundamental research and applications. Its development is presently following an evolutionary scenario when the known detector technologies are being improved in their performances. Important advances are made by developing Pulse Shape Discrimination capable plastic and polysiloxane scintillators, which combine n/γ separation with handling simplicity of solid scintillators. GEM and MicroMega detectors promise to make a breakthrough in the neutron imaging applications, providing a good spacial resolution combined with a large detector area. Diamond detectors allow to exploit the semiconductor detector advantages in very high neutron fluxes of fission or fusion reactors. These and many other developments are ongoing and will be implemented in upcoming experiments and applied research facilities. INFN Workshop on Future Detectors for HL-LHC

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Silicon carbide for high resolution X-ray detectors operating up to 100°C

Cited by 75 publications

References 11 publications

Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

New materials for radiation hard semiconductor dectectors

New neutron detections

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