Silicon carbide dry etching technique for pressure sensors design

Осипов, А. А.; Iankevich, Gleb A.; Speshilova, Anastasiya; Karakchieva, Anna A.; Endiiarova, Ekaterina V.; Levina, Svetlana N.; Karakchiev, Sergey V.; Alexandrov, Sergei

doi:10.1016/j.jmapro.2021.11.010

Cited by 7 publications

(2 citation statements)

References 41 publications

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“…As pressure was applied and released, the output voltage of the sensor varied accordingly. The nonlinearity error can reach up to 0.13%, and the repeatability error is 1.49% [161,162]. Under extreme temperatures and corrosive environments, the sensitivity of the sensor can reach 76.0 µV/V/MPa, with an average daily drift of only 1.61% [162].…”

Section: Microelectromechanical Systemsmentioning

confidence: 99%

A Review of Femtosecond Laser Processing of Silicon Carbide

Wang,

Zhang,

Chen

et al. 2024

Micromachines

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Silicon carbide (SiC) is a promising semiconductor material as well as a challenging material to machine, owing to its unique characteristics including high hardness, superior thermal conductivity, and chemical inertness. The ultrafast nature of femtosecond lasers enables precise and controlled material removal and modification, making them ideal for SiC processing. In this review, we aim to provide an overview of the process properties, progress, and applications by discussing the various methodologies involved in femtosecond laser processing of SiC. These methodologies encompass direct processing, composite processing, modification of the processing environment, beam shaping, etc. In addition, we have explored the myriad applications that arise from applying femtosecond laser processing to SiC. Furthermore, we highlight recent advancements, challenges, and future prospects in the field. This review provides as an important direction for exploring the progress of femtosecond laser micro/nano processing, in order to discuss the diversity of processes used for manufacturing SiC devices.

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Section: Microelectromechanical Systemsmentioning

confidence: 99%

A Review of Femtosecond Laser Processing of Silicon Carbide

Wang,

Zhang,

Chen

et al. 2024

Micromachines

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“…Currently, the main processing methods for SiC mainly include mechanical grinding [14], wet etching [15,16], and dry etching [17][18][19][20][21][22]. However, mechanical gear grinding can make SiC prone to edge collapse and fracture damage, which affects machining quality and also causes irreversible damage to the gear.…”

Section: Introductionmentioning

confidence: 99%

Femtosecond Laser-Induced Phase Transformation on Single-Crystal 6H-SiC

Quan,

Wang,

et al. 2024

Micromachines

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Silicon carbide (SiC) is widely used in many research fields because of its excellent properties. The femtosecond laser has been proven to be an effective method for achieving high-quality and high-efficiency SiC micromachining. In this article, the ablation mechanism irradiated on different surfaces of 6H-SiC by a single pulse under different energies was investigated. The changes in material elements and the geometric spatial distribution of the ablation pit were analyzed using micro-Raman spectroscopy, Energy Dispersive Spectrum (EDS), and an optical microscope, respectively. Moreover, the thresholds for structural transformation and modification zones of 6H-SiC on different surfaces were calculated based on the diameter of the ablation pits created by a femtosecond laser at different single-pulse energies. Experimental results show that the transformation thresholds of the Si surface and the C surface are 5.60 J/cm2 and 6.40 J/cm2, corresponding to the modification thresholds of 2.26 J/cm2 and 2.42 J/cm2, respectively. The Raman and EDS results reveal that there are no phase transformations or material changes on different surfaces of 6H-SiC at low energy, however, decomposition and oxidation occur and then accumulate into dense new phase material under high-energy laser irradiation. We found that the distribution of structural phase transformation is uneven from the center of the spot to the edge. The content of this research reveals the internal evolution mechanism of high-quality laser processing of hard material 6H-SiC. We expect that this research will contribute to the further development of SiC-based MEMS devices.

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