Silicon Carbide Diffusion Bonding by Spark Plasma Sintering

Aroshas, Ron; Rosenthal, I.; Stern, A.; Shmul, Zvia; Kalabukhov, Sergey; Frage, N.

doi:10.1080/10426914.2014.952019

Cited by 19 publications

(7 citation statements)

References 19 publications

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“…4); however, the three SiC components were not exactly identical in porosity after diffusion bonding due to two kinds of different preparation processes of SiC ceramics, [31,32] Noted that the joint strength values without any temperature and radiation condition denote the ones obtained at or around room temperature, and that the double slash (//) denotes the joining of SiC f /SiC composites in the whole text. and the SPS-processed disk-shaped specimens remained almost fully dense [23].…”

Section: No Interlayermentioning

confidence: 90%

“…Most of the joining of SiC ceramics and SiC f /SiC composites to themselves [23,24], graphite [25], and metals (such as W [26][27][28], F82H steel [29], and Al alloy [30]) using no interlayer was performed by diffusion bonding or hot-pressing sinter bonding process, except that a casting process was adopted to join SiC ceramic to Al alloy, leaving a super-low joint tensile strength of ~0.4 MPa [31,32], as shown in Table 1. The joining temperature varied greatly from 600 to 2000 ℃ with the joining objects while employing the diffusion bonding process, the joining pressure ranged from several to dozens of MPa, and the holding time spanned from 5 to 600 min.…”

Section: No Interlayermentioning

confidence: 99%

“…www.springer.com/journal/40145 J Adv Ceram 2019, 8(1):[19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38] …”

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confidence: 99%

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Recent advances in joining of SiC-based materials (monolithic SiC and SiCf/SiC composites): Joining processes, joint strength, and interfacial behavior

et al. 2019

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Silicon carbide (SiC) has been widely concerned for its excellent overall mechanical and physical properties, such as low density, good thermal-shock behavior, high temperature oxidation resistance, and radiation resistance; as a result, the SiC-based materials have been or are being widely used in most advanced fields involving aerospace, aviation, military, and nuclear power. Joining of SiC-based materials (monolithic SiC and SiC f /SiC composites) can resolve the problems on poor processing performance and difficulty of fabrication of large-sized and complex-shaped components to a certain extent, which are originated from their high inherent brittleness and low impact toughness. Starting from the introduction to SiC-based materials, joining of ceramics, and joint strength characterization, the joining of SiC-based materials is reviewed by classifying the as-received interlayer materials, involving no interlayer, metallic, glass-ceramic, and organic interlayers. In particular, joining processes (involving joining techniques and parameter conditions), joint strength, interfacial microstructures, and/or reaction products are highlighted for understanding interfacial behavior and for supporting development of application-oriented joining techniques.

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Section: No Interlayermentioning

confidence: 90%

Section: No Interlayermentioning

confidence: 99%

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Recent advances in joining of SiC-based materials (monolithic SiC and SiCf/SiC composites): Joining processes, joint strength, and interfacial behavior

et al. 2019

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“…The joining technology is an effective way to realize complex-shaped or large SiC ceramic parts. A wide range of methods have been reported to join SiC ceramics, such as metallic braze-based joining [5], the use of MAX phases [6], diffusion joining [7], polymerderived SiC joining [8], glass-ceramic joining joint [9], and Si-C reaction joining [10][11][12][13][14][15][16][17][18]. Among these methods, Si-C reaction joining is an attractive technique because the thermomechanical properties of the joint interlayer can be tailored to match those of the joining materials [16].…”

Section: Introductionmentioning

confidence: 99%

Joining of SiC Ceramic by Si–C Reaction Bonding Using Organic Resin as Carbon Precursor

Huang

Zhu

et al. 2022

Materials

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In this study, the joining of silicon carbide (SiC) ceramics was achieved via a Si–C reaction bonding method using the phenolic resin (PF)–MgCl2 system as the carbon precursor. Specifically, by adding MgCl2 to the phenolic resin mixture, the average pore size of the product of carbonization of the PF resin mixture increased from 14 ± 5 nm to 524 ± 21 nm, which was beneficial for the infiltration of molten silicon at high temperature. The microstructure of the joined specimens and the effect of the inert filler on the joint strength were investigated. It was demonstrated that SiC–SiC joints with strong interfacial bonding and high flexural strength could be obtained by the Si–C reaction bonding method using a phenol formaldehyde resin/alcohol sol-gel system as the carbon precursor. The flexural strength of the joined specimens reached the highest value, i.e., 308 ± 27 MPa when the solid loading of the inert filler was 26%. Overall, stable joining of silicon carbide ceramics was achieved by the proposed method, which has significance for realizing the preparation of complex-shaped or large silicon carbide ceramic parts.

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“…Sintered, hot‐pressed, and CVD (chemical vapor deposition) SiC ceramics have been diffusion‐bonded using metal interlayers of molybdenum, 10 titanium, 11–16 tantalum, 17 tungsten, 18 niobium, 17 zirconium, 16 nickel, 19 Inconel 600, 20 and intermetallics, such as TiAl. Plates, disks, pipes, pipe–disk couples, and other part geometries have been diffusion‐bonded 21 . The diffusional transformation of a metal interlayer reacting with SiC at high temperatures and under high mechanical pressures produces thermally stable carbides, silicides, and complex ternary and higher order compounds that form strong joints.…”

Section: Introductionmentioning

confidence: 99%

Diffusion bonding of SiC ceramics with interlayers of metallic titanium foils and PVD titanium coatings

Halbig

Singh

Tsuda

et al. 2022

Int J Applied Ceramic Tech

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Silicon carbide (SiC) is a candidate material for high‐temperature structural aerospace applications due to its thermal and mechanical properties. Joining technologies enable the fabrication of complex shaped components needed for such applications. Various interlayers and processing conditions were used to form diffusion bonds between SiC substrates. Interlayers of titanium (Ti) foils and physically vapor deposited Ti coatings were used in the thicknesses of 10 and 20 μm with processing hold times of 1, 2, and 4 h. Polished cross sections of resulting diffusion bonds were analyzed using scanning electron microscopy (SEM) coupled with energy‐dispersive spectroscopy (EDS) and using transmission electron microscopy (TEM). From the TEM analysis, selected‐area diffraction patterns for Ti3SiC2, Ti5Si3Cx, and TiSi2 were observed. Moreover, TiC and an unknown phase were present in diffusion bonds formed with metallic titanium foil. From the SEM/EDS analyses, intermediate phases of Ti5Si3Cx and TiC were found to be present in microcracked diffusion bonds. With the thinner Ti interlayers and/or longer processing time, microcracking was alleviated or eliminated due to the presence of the more stable and lower thermal expansive phases of Ti3SiC2 and TiSi2. Detailed analysis of microstructures and the probable phases that formed in the bonded regions is presented.

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Silicon Carbide Diffusion Bonding by Spark Plasma Sintering

Cited by 19 publications

References 19 publications

Recent advances in joining of SiC-based materials (monolithic SiC and SiCf/SiC composites): Joining processes, joint strength, and interfacial behavior

Recent advances in joining of SiC-based materials (monolithic SiC and SiCf/SiC composites): Joining processes, joint strength, and interfacial behavior

Joining of SiC Ceramic by Si–C Reaction Bonding Using Organic Resin as Carbon Precursor

Diffusion bonding of SiC ceramics with interlayers of metallic titanium foils and PVD titanium coatings

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