Silicon cantilevers and tips for scanning force microscopy

Abstract

Monocrystallme slhcon canttlevers with Integrated sdlcon tips for scannmg force mlcroscopy are fabncated by means of mlcromachmmg techmques Theorettcal conslderatlons mcludmg fimte element modelhng have been carried out m order to find a smtable shape and dlmenslons according to the mechanical requirements Several different cantilever designs have been fabricated a simple beam with various cross se&Ions as well as a folded meander shape with square cross section Special attention has been paid to the apphcatlon of these sdlcon microprobes to measure friction Moreover, high-aspect-ratio slhcon tips wtth vanable geometries are presented and their mtegratlon onto cantilevers IS demonstrated Finally, the fabrication of an array of such microprobes IS described, which enables multiple parallel or serial surface profihng to be achieved These Integrated mlcromachmed cantilevers have been successfully applied m standard atomic force microscope measurement systems

Electrically conducting probes with full tungsten cantilever and tip for scanning probe applications

“…The corresponding errors are indicated in the graph, giving the corresponding best fit. From the slope of the curve, E w is determined using equation (2). The bulk value of ρ w = 19.3 × 10 3 kg m −3 [23] is used and t = 500 nm, giving E w = 380 GPa.…”

“…Since the invention of the AFM in 1986 [1], only a very few alternatives to silicon (Si) [2][3][4] or silicon nitride (SiN) [5,6] AFM-cantilevers/tips have been introduced. Some alternatives include (boron (B)-doped) diamond like carbon (DLC) [7][8][9], nickel (Ni) [10,11], GaAs [12] and SU-8 [13].…”

Scanning force microscopy in the dynamic mode using microfabricated capacitive sensors

“…2͑c͔͒ and the photoresist is stripped in acetone. The cantilevers with integrated tips are defined by successive RIE and BHF etchings as previously reported for simple cantilevers 9 ͓see Fig. 2͑d͔͒.…”

Microlever with combined integrated sensor/actuator functions for scanning force microscopy

“…In the steady state the displacement z from the static equilibrium position is given by the standard resonance equation [15] . ( 1 (16) with the quality factor Q = m,Rw,,/c.…”

“…The structure is completely fabricated by means of silicon micromachining techniques as illustrated in Fig 5. The process is based on the fabrication of monocrystalline silicon SFM cantilevers with tips [16] and extended by additional steps including silicon fusion bonding (SFB) and reactive ion etching (RIE). After thermal oxidation to 1.5 pm SiO, of two 280 pm thick phosphorus-doped silicon wafers (p=O.O3 fl cm), both wafers are patterned by photolithography and SiO, etching in buffered hydrofluoric acid (BIG); the upper wafer with the cantilever shape (see dashed line in Fig.…”