Silicon Cantilever Beams Fabricated by Electrochemically Controlled Etching for Sensor Applications

Abstract

concentration is the same as that for the silicon film deposited in the Sill4 gas system (11). ConclusionThe deposition rate of silicon film in the Si2H6-B2H~-He gas system increases by the addition of B2H6, which is different from the Si2H6-PH3-He gas system where the deposition rate is not influenced by the addition of PH3. The deposition rate in the Si2H6-B2H6-He system is expressed by the sum of undoped deposition rate term and additional deposition rate term which is proportional to 2/3 power of the boron concentration in silicon films. In the system, boron is deposited independently without influence of silicon deposition. The amorphous-crystalline transition temperature is decreased with increasing boron concentration in silicon film except for the higher boron concentration than 1.6 • 102~ cm -3. For the higher concentration of boron than 1.6 • 1021 cm -3, crystallizationis suppressed by the Si-B compound formation or the precipitation of boron. The minimum value of resistivity after heat-treatment at 1000~ is 2 • 10 -3 ~-cm for the boron-doped silicon film, which is 4 times higher than that for phosphorus-doped silicon film. ABSTRACTAn electrochemically controlled etching of silicon and an integrated circuit technology are used to fabricate 10 ~m thick cantilever beams containing integrated devices. Such structures are fabricated by two different methods, each of which is analyzed and the advantages and problems inherent in them stated. The influence of several parameters on the etch rate of silicon and on the quality of the beam surface is examined. Finally, an example of the application of such silicon microstructures to sensors is presented: a vacuum sensor, a novel type of thermal vacuum gauge, based on an integrated silicon thermopile.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.218.248.209 Downloaded on 2015-03-16 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.218.248.209 Downloaded on 2015-03-16 to IP

Pattern displacement measurements for Si stencil reticles

“…[7][8][9][10][11] In this experiment, we prepared the Si membranes by anisotropic etching of B-doped Si in KOH aqueous solution. [7][8][9][10][11] In this experiment, we prepared the Si membranes by anisotropic etching of B-doped Si in KOH aqueous solution.…”

Backside-illuminated silicon photodiode array for an integrated spectrometer

“…2(e)]. Etching of the substrate takes place in a KOH solution with a concentration of 33 wt.% at a temperature of 90 C using Electrochemically Controlled Etching (ECE) in a two-electrode configuration [2]. The etching stops at the epilayer, but continues where an isolation diffusion is present and eventually stops on the nitride layer [3] [ Fig.…”

Dissolution slowness surfaces of cubic crystals

“…The fabrication techniques in the field of micromechanical devices are always based on anisotropic etching processes [2,11]. The bias-controlled doping-selective etching technology [2,[26][27][28] appears only as a complementary process which is used for the possibility it offers of controlling the geometry of particular micromachined mechanical structures, such as cantilever beams [26][27][28]. It should be noted that the mechanical performance of micromachined devices depends on their geometry.…”