2017
DOI: 10.1109/jmems.2016.2633442
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Silicon-Based Monolithic Planar Micro Thermoelectric Generator Using Bonding Technology

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Cited by 44 publications
(20 citation statements)
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“…It must be noted that the heat transfer issues discussed in this chapter revolve about the challenge of exchanging heat in planar micromachined structures exhibiting very small exchange surfaces [18][19][20][21][22], while the particular nature of the thermoelectric material employed (e.g. NWs) is of no significance: the same conclusions will apply if silicon membranes, silicon-based thin films, or any other thermoelectric films of interest were considered instead.…”
Section: Micro Thermal Device Architecturementioning
confidence: 94%
“…It must be noted that the heat transfer issues discussed in this chapter revolve about the challenge of exchanging heat in planar micromachined structures exhibiting very small exchange surfaces [18][19][20][21][22], while the particular nature of the thermoelectric material employed (e.g. NWs) is of no significance: the same conclusions will apply if silicon membranes, silicon-based thin films, or any other thermoelectric films of interest were considered instead.…”
Section: Micro Thermal Device Architecturementioning
confidence: 94%
“…The metal-nanowire electrical contact has been investigated, and very low values of contact resistances have been achieved, by Gaeda and co. [ 60 ]. As alternative, suspended silicon platforms can be used to host junction made of polysilicon [ 61 , 62 ] or porous silicon [ 63 ].…”
Section: Techniques For All-silicon Thermoelectric Devicesmentioning
confidence: 99%
“…In both cases, microTEGs operate converting relatively large heat fluxes (due to the small thermal areal resistance of micrometric-sized legs) into electric power over small temperature differences, since the proximity of the two heat sinks disables the establishment of temperature differences comparable to those used in standard TEGs. Both layouts have enabled improved performances over the last twenty years, moving from 1.5 μW (parallel layout, over a temperature difference of 10K) [16] and 1.3 μW cm −2 (normal layout, over a temperature difference of 5K) [17] to the recently achieved power density of 12.3 μW cm −2 (normal layout, over a temperature difference of 31K) [18].…”
Section: Integrated Tegsmentioning
confidence: 99%