Silicon as an emissive optical medium

Shainline, Jeffrey M.; Xu, Jimmy

doi:10.1002/lpor.200710021

Cited by 53 publications

(26 citation statements)

References 79 publications

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“…1 In fact, although silicon is an indirect band gap semiconductor, the development of an all-silicon device showing efficient light emission at room temperature would entail enormous benefits. Many different strategies have been explored to make silicon an efficient infrared emitter at strategic telecom wavelengths, including doping with rare-earth atoms, 2,3 or exploiting optically active structural defects.…”

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confidence: 99%

Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities

Savio

Portalupi

Gerace

et al. 2011

Applied Physics Letters

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Strongly enhanced light emission at wavelengths between 1.3 and 1.6 μm is reported at room temperature in silicon photonic crystal (PhC) nanocavities with optimized out-coupling efficiency. Sharp peaks corresponding to the resonant modes of PhC nanocavities dominate the broad sub-bandgap emission from optically active defects in the crystalline Si membrane. We measure a 300-fold enhancement of the emission from the PhC nanocavity due to a combination of far-field enhancement and the Purcell effect. The cavity enhanced emission has a very weak temperature dependence, namely less than a factor of 2 reduction between 10 K and room temperature, which makes this approach suitable for the realization of efficient light sources as well as providing a quick and easy tool for the broadband optical characterization of silicon-on-insulator nanostructures.

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mentioning

confidence: 99%

Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities

Savio

Portalupi

Gerace

et al. 2011

Applied Physics Letters

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“…(1) silicon material engineering by introducing emissive centers to assist the efficient light emission (Pavesi et al, 2000;Han et al, 2001;Rotem et al, 2007a,b;Shainline and Xu, 2007), (2) strained Ge (Liu et al, 2007(Liu et al, , 2009Cheng et al, 2009;Sun et al, 2009b,c;Camacho-Aguilera et al, 2012), (3) silicon Raman laser Jalali, 2004, 2005;Rong et al, 2005aRong et al, ,b, 2007, and (4) heterogeneous integration of III/V gain materials through packaging (Chu et al, 2009;Fujioka et al, 2010;Urino et al, 2011) or wafer bonding (Park et al, 2005;Fang et al, 2007a,b;Liang et al, 2009aLiang et al, ,b, 2010Stanković et al, 2010;Grenouillet et al, 2012). …”

Section: Review On Research For Lasers On Siliconmentioning

confidence: 99%

High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

et al. 2015

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Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS) fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W) bonding technology, which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP) laser, lateralcoupled distributed-feedback laser with side wall grating, and mode-locked laser (MLL). From these results, the presented multiple D2W bonding technology can be a key enabler toward the large-scale heterogeneous integration of optoelectronic integrated circuits.

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“…As bulk silicon itself is a very poor light emitter (quantum efficiency as low as 10 − 6 ), alternative solutions are sought after. It is either possible to find a way to integrate existing III-V lasers onto silicon [6], or one has to investigate new, silicon-based lightemitting materials [7]. However, a silicon-based laser would still be advantageous, allowing for smaller sizes and true integration.…”

Section: Introductionmentioning

confidence: 99%

Silicon nanocrystals as fast and efficient light emitters for optical gain

Kůsová

2012

Journal of Non-Crystalline Solids

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Silicon as an emissive optical medium

Cited by 53 publications

References 79 publications

Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities

Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities

High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

Silicon nanocrystals as fast and efficient light emitters for optical gain

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