Silicon as an advanced window material for high power gyrotrons

Паршин, В.В.; Heidinger, R.; Andreev, B. A.; Gusev, A. V.; Shmagin, V. B.

doi:10.1007/bf02066662

Cited by 49 publications

(29 citation statements)

References 8 publications

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“…The loss tangent tan δ of single-crystal gold-compensated silicon [10] is exactly inversely proportional to the frequency, i.e., no lattice component of the losses is found. The losses are dominated by the conduc- The analytical formulas derived in [11] for tan δ of CVD diamonds imply that there is a possibility for decreasing losses by at least one order of magnitude.…”

Section: Measuring the Dielectric Parametersmentioning

confidence: 96%

“…Table 3 shows the most interesting results for the best samples of semiconductor materials. A series of experiments were carried out to study dielectric losses in state-of-the-art chemical-vapor-deposition (CVD) diamonds and single-crystal silicon [10] at frequencies 45-350 GHz and temperatures 20-650 • T. It was found that the losses in CVD diamonds at frequencies of up to 180 GHz are mainly related to the extrinsic conductivity (tan δ ∼ 1/f decreases with increasing frequency) [5,6,11,12]. "Unstable" behavior of samples with tan δ ∼ 10 −5 and even tan δ ∼ 10 −6 was discovered at frequencies above 200 GHz.…”

Section: Measuring the Dielectric Parametersmentioning

confidence: 99%

See 1 more Smart Citation

Instrumental complex and the results of precise measurements of millimeter- and submillimeter-wave propagation in condensed media and the atmosphere

Паршин

Tretyakov

Koshelev

et al. 2009

Radiophys Quantum El

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We describe an instrumental complex based on high-Q open Fabry-Perot resonators for the frequency band 36-370 GHz and present original measurement techniques and the latest results of measuring (i) refractive indices and losses of modern high-quality dielectrics for high-power electronics (with prognosis for up to the terahertz band) and general-purpose dielectrics including films, (ii) reflectivities of both antenna reflectors of cryogenic-receiver radiotelescopes and the so-called "hot" antennas for future Mercurian missions, and (iii) the atmospheric absorption for the development of high-precision wave-propagation models including the continuum absorption. The instrumentation and the measurement techniques are intended for studying condensed-media parameters at temperatures 80-900 K and atmospheric parameters at temperatures from −40 • C to +60 • C and humidities from 0 to 80%.

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Section: Measuring the Dielectric Parametersmentioning

confidence: 96%

Section: Measuring the Dielectric Parametersmentioning

confidence: 99%

Instrumental complex and the results of precise measurements of millimeter- and submillimeter-wave propagation in condensed media and the atmosphere

Паршин

Tretyakov

Koshelev

et al. 2009

Radiophys Quantum El

Self Cite

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show abstract

“…Prior studies of the loss in high-resistivity silicon show a complicated temperature dependence. 13 However, the loss is always smaller at 4 K than at room temperature for potential optical components. Some care must be exercised when measuring the optical properties of silicon because both heating and ultraviolet light raise its conductivity.…”

Section: Materials Properties and Construction Detailsmentioning

confidence: 99%

Millimeter-wave antireflection coating for cryogenic silicon lenses

et al. 2006

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We have developed and tested an antireflection (AR) coating method for silicon lenses at cryogenic temperatures and millimeter wavelengths. Our particular application is a measurement of the cosmic microwave background. The coating consists of machined pieces of Cirlex glued to the silicon. The measured reflection from an AR coated flat piece is less than 1.5% at the design wavelength. The coating has been applied to flats and lenses and has survived multiple thermal cycles from 300 to 4 K. We present the manufacturing method, the material properties, the tests performed, and estimates of the loss that can be achieved in practical lenses.

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“…Some materials, such as CVD diamond [1], [2], crystalline silicon carbide, and single-crystalline Au-doped Silicon have loss tangent as low as to in the millimeter wave range [3]. Various methods of dielectric measurements have been reported for such low loss material, however, the open resonator method is the most convenient and sensitive technique [4], [5].…”

Section: Introductionmentioning

confidence: 99%

Phase Locked BWO System for Open Resonator Measurement in D-Band

Gao

Jones

Dutta

2009

IEEE Microw. Wireless Compon. Lett.

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The combination of a D-Band phase-locked backward-wave oscillator (BWO) with a spectrum analyzer for measurement of permittivity and low loss-tangent is presented. For measuring low loss tangent material, such as CVD diamond and high purity semi-insulating ( ) 4SiC, at millimeter wave ranges, it is necessary to precisely measure an increase of a few kHz in a line-width of 200 kHz. We describe a phase-locked loop with frequency conversion that combines a BWO source and a microwave spectrum analyzer to obtain line-width measurements with less than 2 kHz (less than 1%) standard deviation in D-Band millimeter wave.Index Terms-Backward-wave oscillators (BWOs), frequency conversion, millimeter wave, phase-locked loop (PLL).

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Silicon as an advanced window material for high power gyrotrons

Cited by 49 publications

References 8 publications

Instrumental complex and the results of precise measurements of millimeter- and submillimeter-wave propagation in condensed media and the atmosphere

Instrumental complex and the results of precise measurements of millimeter- and submillimeter-wave propagation in condensed media and the atmosphere

Millimeter-wave antireflection coating for cryogenic silicon lenses

Phase Locked BWO System for Open Resonator Measurement in D-Band

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