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We describe here a system for accurate measurement of the dielectric properties of very low-loss materials in the 130 to 170 GHz frequency range. This system utilizes an open resonator with a quality factor ∼1×10 6 . Resonance curves for this resonator are acquired with a commercial spectrum analyzer equipped with an external millimeter-wave harmonic mixer. The excitation source is a backward-wave oscillator locked to the spectrum analyzer local oscillator via a digital phase-locked loop. This system permits rapid and accurate measurement of resonance curve line widths, permitting determination of loss tangents down to the 10 -6 range. Results are reported for silicon carbide (SiC), CVD diamond, sapphire, and quartz.

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Thin a-Si:H films, with a thickness of 1 µm, with different hydrogen concentrations, prepared by hot wire deposition were crystallized by 514.5 nm cw Ar ion laser radiation, with a power density between 150 and 270 kW/cm2. The crystallization was continuously monitored by Raman spectroscopy for exposures up to hours. The analysis of crystallization process using Johnson-Mehl phenomenological equations showed an apparent crystallization energy of around 0.5 eV and low dimensional crystal growth. The mean value of the crystal size decreases with increasing irradiation energy and initial hydrogen content and varies between 3 and 6 nm.