Silicon anisotropic etching in alkaline solutions I. The geometric description of figures developed under etching Si(100) in various solutions

Zubel, Irena; Barycka, Irena

doi:10.1016/s0924-4247(98)00141-1

Cited by 83 publications

(50 citation statements)

References 4 publications

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“…The created replica was fixed on the glass side using an index matching liquid (Norland Products Inc.). A silicon wafer with <100> orientation, etched in KOH with up to 8 μm resulting randomly distributed pyramids, 28,38 was used as a master.…”

Section: Resultsmentioning

confidence: 99%

Efficient Light Management by Textured Nanoimprinted Layers for Perovskite Solar Cells

et al. 2017

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Section: Resultsmentioning

confidence: 99%

Efficient Light Management by Textured Nanoimprinted Layers for Perovskite Solar Cells

et al. 2017

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“…As a rule of thumb, the planes with the lowest etching rate are prone to develop during the etching. Considering etching of a round hole, the requirements for the etching rates of these planes that lead to both or only one plane development [6] , as follows: (i) ν (100) /ν (110) ≥ 2 ≈1.41 -only (100) planes develop; (ii) ν (100) /ν (110) ≤ 2 /2≈0.71 -only (110) planes develop and (iii) 2 /2＜ν (100) /ν (110) ＜ 2 -both planes develop. A rough estimation of ν (100) /ν (110) ratio can be made by measuring the pore size along both directions before (Fig.…”

Section: Methodsmentioning

confidence: 99%

Influences of temperature and concentrations on morphology of TMAH anisotropic etching for silicon microchannel plate

et al. 2013

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Anisotropic etching of monocrystalline silicon plays an important role in Microsystems technology in the recent years. TMAH, as one of the anisotropic etchants, is used to fabricate pores with square cross-section. Careful choice of concentration, isopropyl alcohol additives and temperature of alkaline solution allows for certain crystallographic directions to be preferentially etched. In this way, pores with square, eight-sided (octagonal) or rotated square shapes can be attained and convert to each other. We show the etch selectivity on (100) and (110) planes in TMAH solution with low concentration. The etch rates on (100) and (110) planes at different temperature and concentration has been measured. The results indicated that the perfect orthogonal array of pores with sharp edges and corners can be obtained at more than 40℃ in 1wt% TMAH solution. There is good etch selectivity on (110) surface and the etch rate on (110) surface is slower than (100) surface under the condition.

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“…As a rule of thumb, the planes with the lowest etching rate are prone to develop during the etching. Considering etching of a round hole, Zubel et al 36 υ υ < < -both planes develop. A rough estimation of ν 110 /ν 100 ratio can be made by measuring the pore size along both directions before (Fig.…”

Section: Alkaline Etchingmentioning

confidence: 99%

Post-etching shaping of macroporous silicon

et al. 2007

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There is a limited variety of pore shapes that can be attained by electrochemical etching itself. We show that these limitations can be overcome and new pore geometries can be realized by additional post-etching treatment of macroporous silicon. Repeated oxidation and subsequent oxide-removal steps are used to correct the initially faceted pore cross-section and to obtain cylindrical pores. We demonstrate that the anisotropy of oxidation process is just opposite to the anisotropy exhibited by the electrochemical etching and accounts for the observed evolution of pore shape from a rounded square towards circular one. On the other hand, alkaline post-etching treatment is used to fabricate pores with square cross-section. Careful choice of concentration, alcohol additives and temperature of alkaline solution allows for certain crystallographic directions to be preferentially etched. In this way, pores with square, eight-sided (octagonal) or rotated square shapes can be attained. When applied on 2D macropore arrays with modulated pores, such post-etching treatment enables the realization of truly 3D structures with very complex geometries.

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Silicon anisotropic etching in alkaline solutions I. The geometric description of figures developed under etching Si(100) in various solutions

Cited by 83 publications

References 4 publications

Efficient Light Management by Textured Nanoimprinted Layers for Perovskite Solar Cells

Efficient Light Management by Textured Nanoimprinted Layers for Perovskite Solar Cells

Influences of temperature and concentrations on morphology of TMAH anisotropic etching for silicon microchannel plate

Post-etching shaping of macroporous silicon

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